Charge Trapping and Defect Generation in Thermal Oxide Layers

Heyns, Marc; Schwerin, A. v.; Kelleher, Ann; Kubota, Michitaka; Verhaverbeke, Steven

doi:10.1007/978-1-4899-1588-7_45

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Charges and Interface States Generation1

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1994

1996

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Cited by 2 publications

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“…These have a density of about 1 to 5 x 10 12 cm -2 , depending on the pro cessing conditions of the oxide layer, and capture cross sections for holes, which are about 1 to 50 x 10 -14 cm 2 depending on E xx [10,36] ; ff has values between 10 -1 , for a hardened oxide, and 1, for sensitive oxide layers, and appears to be a fundamental parameter in maximizing sensitivity.…”

Section: Charges and Interface States Generationmentioning

confidence: 99%

Thick oxide MOS transistors for ionizing radiation dose measurement

Sarrabayrouse

Gessinn

1994

Radioprotection

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The main properties of metal-oxide-silicon radiation dosemeters are described and the results obtained in terms of sensitivity and stability with thick oxide layers are given. Possible methods for improving their sensitivity are briefly discussed. RÉSUMÉLes principales propriétés des dosimètres de rayonnement métal-oxyde-semiconducteur (MOS) sont décrites. Nous présentons les résultats obtenus pour la sensibilité et la stabilité des dosimètres à oxyde de grille épais qui montrent que ce composant a des applications en dosimetric des personnels et en médecine. Nous discuterons brièvement les améliorations possibles de la sensibilité.

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Section: Charges and Interface States Generationmentioning

confidence: 99%