2008
DOI: 10.1002/adma.200702688
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Charge Trapping at the Dielectric of Organic Transistors Visualized in Real Time and Space

Abstract: Recently the commercialization of the first reflective organic displays employing organic field-effect transistors (OFETs) used for on-off switching of pixels was announced. These new electrophoretic displays are bistable and have low power consumption. Future, emissive, organic light-emitting displays (OLEDs), however, will operate at high powers and then reliability and excellent long-term stability OFETs will be crucial for stable operation. Unfortunately, OFETs commonly suffer significantly from gate-bias … Show more

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Cited by 146 publications
(138 citation statements)
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“…The dynamics of this evolution was found to be determined by the amount of water on the SiO 2 , which could be regulated by treatment with HMDS. 13 The time evolution of the potential profile on this structure shows that charges can move around reversibly on the SiO 2 surface even in absence of a semiconductor. Surprisingly, the time evolution was found to occur on equal time scales for both positive and negative polarity of the drain bias.…”
Section: Proton Migration Mechanism For the Bias-stress Effectmentioning
confidence: 86%
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“…The dynamics of this evolution was found to be determined by the amount of water on the SiO 2 , which could be regulated by treatment with HMDS. 13 The time evolution of the potential profile on this structure shows that charges can move around reversibly on the SiO 2 surface even in absence of a semiconductor. Surprisingly, the time evolution was found to occur on equal time scales for both positive and negative polarity of the drain bias.…”
Section: Proton Migration Mechanism For the Bias-stress Effectmentioning
confidence: 86%
“…Furthermore, pretreatment of the SiO 2 with hydrophobic HMDS or octadecyltrichlorosilane is is known to decelerate the effect. 9,13 Use of a hydrophobic organic gate dielectric practically eliminates the effect 21 while coverage of the SiO 2 with a layer that is impenetrable to water does the same. 10 These observations indicate that the threshold-voltage shift in organic transistors is related to residual water.…”
Section: Bias-stress Effect: Experimentalmentioning
confidence: 99%
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