Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

Wang, Lisa Ling; He, Hongyu; Liu, Xiang; Deng, Wei; Zhang, Shengdong

doi:10.1109/ted.2015.2433681

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Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

Cited by 4 publications

References 32 publications

Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions

Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

Effect of the epoxy insulators shed structure on pollution flashover performance

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