Charged point defects in semiconductors

Seebauer, Edmund G.; Kratzer, Meredith C.

doi:10.1016/j.mser.2006.01.002

Cited by 129 publications

(114 citation statements)

References 644 publications

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“…9,10 Furthermore, improper change of group-V fluxes at the source and channel interface will introduce intermixing between As and Sb that leads to uncontrolled layer composition at this heterointerface, which in turn will produce high dislocation density in this region. 8,10 These dislocations will introduce fixed charges at the source/channel interface 15 and thus, it will affect the band alignment as well as the value of E beff . 10 Very recently, we have demonstrated by simulation that the band alignment is indeed converted from staggered gap to broken gap with a fixed positive charge density of $6 Â 10 12 /cm 2 caused by high dislocation density at the source/channel GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As interface.…”

Section: Introductionmentioning

confidence: 99%

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

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Articles you may be interested inTunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction J. Appl. Phys. 113, 094502 (2013) The compositional dependence of effective tunneling barrier height (E beff ) and defect assisted band alignment transition from staggered gap to broken gap in GaAsSb/InGaAs n-channel tunnel field effect transistor (TFET) structures were demonstrated by x-ray photoelectron spectroscopy (XPS). High-resolution x-ray diffraction measurements revealed that the active layers are internally lattice matched. The evolution of defect properties was evaluated using cross-sectional transmission electron microscopy. The defect density at the source/channel heterointerface was controlled by changing the interface properties during growth. By increasing indium (In) and antimony (Sb) alloy compositions from 65% to 70% in In x Ga 1Àx As and 60% to 65% in GaAs 1Ày Sb y layers, the E beff was reduced from 0.30 eV to 0.21 eV, respectively, with the low defect density at the source/channel heterointerface. The transfer characteristics of the fabricated TFET device with an E beff of 0.21 eV show 2Â improvement in ON-state current compared to the device with E beff of 0.30 eV. On contrary, the value of E beff was decreased from 0.21 eV to À0.03 eV due to the presence of high defect density at the GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As heterointerface. As a result, the band alignment was converted from staggered gap to broken gap, which leads to 4 orders of magnitude increase in OFF-state leakage current. Therefore, a high quality source/channel interface with a properly selected E beff and well maintained low defect density is necessary to obtain both high ON-state current and low OFF-state leakage in a mixed As/Sb TFET structure for high-performance and lower-power logic applications. V C 2012 American Institute of Physics. [http://dx

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Section: Introductionmentioning

confidence: 99%

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

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“…The current reduction in the size of semiconductor devices has intensified the urgency of the requirement and made the atomic scale characterization of defects and impurities unprecedentedly important. 1 Scanning probe microscopy is a powerful technique because of its high spatial resolution. Since the development of scanning tunneling microscopy ͑STM͒, various techniques based on STM have been employed to analyze the atomic structures and electronic states of defects and impurities on semiconductor surfaces.…”

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confidence: 99%

Probing nanoscale potential modulation by defect-induced gap states on GaAs(110) with light-modulated scanning tunneling spectroscopy

Yoshida

Kanitani

Takeuchi

et al. 2008

Applied Physics Letters

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We investigated charged defects on an n-GaAs͑110͒ surface using light-modulated scanning tunneling spectroscopy. Tunneling via a single defect-induced gap state under photoillumination was observed for the isolated atomic defects. Screened Coulomb potentials induced around a charged Ga vacancy and a step edge were visualized, for the first time, with a nanometer spatial resolution. Furthermore, the charge states of the individual defects were determined on the atomic level.

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“…The calculation of E F q in the bulk of pure materials has become routine (see review [3]) although there remain problems due to the approximations required (see discussion in [4]). Calculations become more complex and expensive if we consider defects at surfaces (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Calculations become more complex and expensive if we consider defects at surfaces (e.g. [5]) or interfaces between pure materials (rarely treated [3]), but overall a broad understanding of defects in pure materials has been achieved. However, many of the most important semiconductor materials are not pure at all, but alloys: either binary (e.g.…”

Section: Introductionmentioning

confidence: 99%

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Controlling dopant solubility in semiconductor alloys

Höglund

Castleton

Eriksson

et al. 2010

J. Phys.: Conf. Ser.

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Abstract. We consider the formation energies and stabilities of dopants in semiconductor alloys. We show that they are not bounded by the formation energies in the related pure materials. On the contrary, by tuning the alloy composition, dopant solubility can be increased significantly above that in the pure materials. Furthermore, it is not always necessary to carry out full defect calculations in alloy supercells, since good estimates of the formation energies at the most stable substitution sites can be obtained by calculating the formation energies in the various component pure materials, but strained to the lattice parameter of the alloy.

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Charged point defects in semiconductors

Cited by 129 publications

References 644 publications

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Probing nanoscale potential modulation by defect-induced gap states on GaAs(110) with light-modulated scanning tunneling spectroscopy

Controlling dopant solubility in semiconductor alloys

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