Charged Semiconductor Defects

Seebauer, Edmund G.; Kratzer, Meredith C.

doi:10.1007/978-1-84882-059-3

Cited by 40 publications

(13 citation statements)

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] It is well known that in III-V semiconductors, three types of point defects, vacancies, interstitials, and antisites, determine the electrical and optical nature of a material. 15) For GaAs, As interstitials (As i ), Ga vacancies (V Ga ), and As antisites (As Ga ) are identified as the three major defects. 1,[16][17][18] EL2 defects, 17) a type of antisite defect, represent the majority defect type and create deep-level energy states in the forbidden band located approximately 0.8 eV below the conduction band (CB) minimum.…”

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confidence: 99%

Lifetimes of photogenerated electrons on a GaAs surface affected by nanostructural defects

Yamada

Koshihara

Onda

2015

Appl. Phys. Express

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The recombination dynamics of photogenerated carriers on temporal and spatial scales of 100 fs and 100 nm, respectively, on an inhomogeneous GaAs surface with structural defects was investigated using time-resolved photoemission electron microscopy with femtosecond laser pulses. The observed photocarrier lifetimes (τ) ranged from subpicoseconds to picoseconds at isolated structural defects and were inversely proportional to the photoemission intensity at each defect. We concluded that τ corresponds to the carrier trapping time to midgap defect states and estimated the density of the midgap states at each defect on the basis of the relation between τ and the photoemission intensity.

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Lifetimes of photogenerated electrons on a GaAs surface affected by nanostructural defects

Yamada

Koshihara

Onda

2015

Appl. Phys. Express

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“…Further association of point defects as a result of low-temperature migration mechanisms (including hopping migration of Si i + , photostimulated migration of Si i and B I and migration of vacancies and divacancies) leads to the formation of donor or acceptor defect clusters. In oxygen containing Cz-Si interstitial oxygen atoms O i form high-mobility oxygen dimers O 2i which associate into clusters of low-temperature thermal donors TD-1 from (SiO n ) + complexes with n < 10 [18]. Simultaneously vacancy clusters form due to the generation of interstitial silicon atoms Si i from thermal donor complexes [10,11,19].…”

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confidence: 99%

Study of the effect of local photon annealing on stress in silicon wafers

Старков¹,

Gosteva²,

Иржак³

et al. 2019

MoEM

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The effect of photon annealing on deformation in the crystal structure of boron doped Cz-Si wafers has been studied using triple crystal X-ray diffraction. Conventional annealing of the entire surface of double-side polished silicon wafers with halogen lamps (photon annealing mode) and rapid thermal annealing produce compression deformation. Annealing with special phototemplate providing for local annealing of multiple separated wafer areas (local photon annealing mode) at relatively low wafer temperatures (less than 55 °C) produces tensile deformation. This effect however is not observed if the reverse side of the annealed wafer contains a mechanical gettering layer. A mechanism explaining the experimental results has been suggested and can be used for the synthesis of charge pumps in photoelectric converter structures.

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“…In this configuration each of these dangling or broken bonds contains one unpaired valence electron, and the interesting consequences of the re-bonding effect could occur to eliminate these dangling bonds. [13] In the process, the structural relaxation or nuclear displacements can be achieved in order to minimize the total energy of the system, and the relevant tetragonal John-Teller distortion could reduce the symmetry of the original configuration and break the tetrahedral (T d ) symmetry of the system.…”

Section: Resultsmentioning

confidence: 99%