Inelastic electron tunneling spectroscopy (IETS) measurements are usually carried out in the low-voltage ("Ohmic", i.e., linear) regime where the elastic conduction/voltage characteristic is symmetric to voltage inversion. Inelastic features, normally observed in the second derivative d 2 I/dV 2 are also symmetric (in fact antisymmetric) in many cases, but asymmetry is sometimes observed. We show that such asymmetry can occur because of different energy dependences of the two contact self-energies. This may be attributed to differences in contact density of states (different contact material) or different energy dependence of the coupling (STM-like geometry or asymmetric positioning of molecular vibrational modes in the junction). The asymmetry scales with the difference between the energy dependence of these self-energies and disappears when this dependence is the same for the two contacts. Our nonequilibrium Green function approach goes beyond proposed WKB scattering theory 1 in properly accounting for Pauli exclusion, as well as providing a path to generalizations, including consideration of phonon dynamics and higher-order perturbation theory.Rectification effects in molecular conduction junctions have been of interest both for possible diode device applications of such junctions 2 (where voltage dependence of the donor and acceptor (contacts) energy levels brings them in or out of resonance at opposite voltage drop polarities) and because of the need to understand the bias asymmetry in scanning tunneling microscope studies of adsorbed molecules 3 . Current-voltage (I/V) asymmetry can arise from different electronic structure in the contacts (peaks in density of states) or from an asymmetric behavior with respect to bias inversion of the electrostatic potential distribution across the junction. The latter can be caused by geometric asymmetry, different coupling strength of the molecule to the contacts, weak links, and charging. 4,5 In such cases, change of the electronic structure of the molecule under bias reversal is responsible for the rectification.In inelastic electron tunneling spectroscopy (IETS), one follows the onset of inelastic effects on the tunneling current that are most pronounced in the second derivative of current vs voltage. 6 Here we consider the possible asymmetry of d 2 I/dV 2 under a similar voltage reversal. Note that mechanisms for I-V asymmetry mentioned above work in the relatively high-voltage regime (of the order of LUMO-HOMO gap), after essential current buildup starts. IETS experiments, on the other hand, are done at much lower voltages in the "Ohmic" (by "Ohmic", we designate current-voltage characteristics) regime. Naively speaking, "Ohmic" behavior would suggest a symmetric signal in this case. On the other hand, the inelastic character of the measurement suggests that strict invariance to bias reversal holds only for the symmetric positioning of the vibrational mode between the electrodes. Indeed, the simplest picture for the IETS experiment is just an electron tunneling thr...