Charging Phenomena and Charge Compensation in AES on Metal Oxides and Silica

Guo, Honglian; Maus‐Friedrichs, W.; Kempter, V.

doi:10.1002/(sici)1096-9918(199706)25:6<390::aid-sia247>3.0.co;2-x

Cited by 29 publications

(12 citation statements)

References 15 publications

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“…Defects grown in fabrication generally only give rise to shallow energy levels that are usually unable to trap electrons at room temperature, 2 or the defect density is low so that they do not cause an evident charge-up. 6,7,12 The results manifest a causality between oxygen depletion due to ESD and the charge-up of Al 2 O 3 . Process ͑i͒ is negligible in the conventional AES ͑beam energies р10 keV).…”

Section: Introductionmentioning

confidence: 76%

Oxygen environmental Auger electron spectroscopy: Eliminating the electron beam effects on Al2O3 during Auger analysis

Guo

Maus‐Friedrichs

Kempter

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inIon and electron bombardment-related ion emission during the analysis of diamond using secondary ion mass spectrometry Nanometer fabrication using selective thermal desorption of SiO 2 induced by focused electron beams and electron beam interference fringesThe charging phenomena and charge compensation under electron beam irradiation have been studied on alumina using Auger electron spectroscopy ͑AES͒. Electron-beam effects, observed in AES as oxygen depletion, contamination from residual gas, and charge-up, can be efficiently reduced in an oxygen environment of р5ϫ10 Ϫ8 Torr O 2 . The oxygen environmental Auger electron spectroscopy reveals an inherent relation between the oxygen depletion and the charge-up of alumina: Oxygen depletion due to electron-stimulated desorption, preceding the other electron-beam effects, is the primary cause of the charge-up of alumina. The charging phenomena of alumina and the efficiency of the O 2 environment for charge compensation can be interpreted in terms of the general energy band schema.

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Section: Introductionmentioning

confidence: 76%

Oxygen environmental Auger electron spectroscopy: Eliminating the electron beam effects on Al2O3 during Auger analysis

Guo

Maus‐Friedrichs

Kempter

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…11). Such a splitting is clearly visible for the O(KLL) line of the Auger spectra obtained by Guo et al (1997) on a single crystal of Al 2 O 3 irradiated at 2 keV with a 5 µm spot. In contrast to a previous assignment (Cazaux 1999a), the O(KLL) line that does not change position has to be attributed to the Auger electrons directly induced by the incident beam, and the O(KLL) line of increasing kinetic energy with irradiation time has to be attributed to the Auger electrons induced by the BSEs.…”

Section: Comparison With Experimentsmentioning

confidence: 94%

Charging in scanning electron microscopy “from inside and outside”

Cazaux¹

2004

Scanning

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Summary: This paper is an attempt to analyse most of the complicated mechanisms involved in charging and discharging of insulators investigated by scanning electron microscopy (SEM). Fundamental concepts on the secondary electron emission (SEE) yield from insulators combined with electrostatics arguments permit to reconsider, first, the widespread opinion following which charging is minimised when the incident beam energy E 0 is chosen to be equal to the critical energy E°2 , where the nominal total yield δ°+η°= 1. For bare insulators submitted to a defocused irradiation, it is suggested here that the critical energy under permanent irradiation E C 2 corresponds to a range of primary electrons, R, and nearly equals the maximum escape depth of the secondary electrons, r. This suggestion is supported by a comparison between published data of the SEE yield δ°o f insulators (short pulse experiments) and experimental results obtained from a permanent irradiation for E C 2 . New SEE effects are also predicted at the early beginning of irradiation when finely focused probes are used. Practical considerations are also developed, with specific attention given to the role of a contamination layer where a negative charging may occur at any beam energy. The role of the various time constants involved in charging and discharging is also investigated, with special attention given to the dielectric time constant, which explains the dose rate-dependent effects on the effective landing energy in the steady state. Numerical applications permit to give orders of magnitude of various effects, and several other practical consequences are deduced and illustrated. Some new mechanisms for the contrast reversal during irradiation or with the change of the primary electron (PE) energy are also suggested.

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“…The system has been described in detail previously. 8,9 The integrated electron gun is applied for sample excitation, as well as for damaging and a͒ Author to whom correspondence should be addressed; electronic mail: weipengl@bjpu.edu.cn charging the sample. The primary current density at the applied angles of incidence ␣ ͑with respect to the specimen normal͒ varies with the primary energy (E p ) as indicated in Table I.…”

Section: Methodsmentioning

confidence: 99%

“…In O 2 environmental AES below 8 ϫ10 Ϫ8 Torr, the reoxidation of the reduced surface of the oxide samples is the dominating process for charge reduction. 8 The annealing behavior of the charging phenomena in SiO 2 samples with and without O 2 exposure is investigated. Due to the poor thermo-conductivity of SiO 2 , the measured temperature can be underestimated seriously.…”

Section: Methodsmentioning

confidence: 99%

“…8 It has been shown that a satisfactory compensation of all the irradiated effects on Al 2 O 3 ͑charging phenomena, ESD, and contamination of the surface from residual gas͒ is achieved in 5ϫ10 Ϫ8 Torr O 2 . ESD on SiO 2 can be reduced significantly in the environmental AES, although charge compensation can be achieved only for lower primary energies.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Charge trapping and charge compensation during Auger electron spectroscopy on SiO2

Guo

Maus‐Friedrichs

Kempter

1999

Journal of Applied Physics

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Articles you may be interested inIon and electron bombardment-related ion emission during the analysis of diamond using secondary ion mass spectrometry Alternative method of using an electron beam for charge compensation during ultralow energy secondary-ionmass spectroscopy experiments J. Vac. Sci. Technol. A 24, 953 (2006); 10.1116/1.2201044 Oxygen environmental Auger electron spectroscopy: Eliminating the electron beam effects on Al 2 O 3 during Auger analysisIt is well known that radiolysis, induced by the electron bombardment, leads to different defects in SiO 2 , but little is known about the trapping behavior of these defects. In this article, the charging behavior and the depth profiles of the irradiation damage introduced by electron bombardment are studied with Auger electron spectroscopy ͑AES͒. For charge reduction an environmental AES using O 2 ͑up to 8ϫ10 Ϫ8 Torr͒ and specimen heating are applied. In environmental AES, a strong charge reduction is observed, and the importance of the environment for charge compensation reveals a correlation with electron stimulated desorption. By heating the sample, a strong charge reduction takes place above 500°C; complete charge compensation can be expected by heating the sample above 700°C in an O 2 environment of 5ϫ10 Ϫ8 Torr. We suggest that EЈ centers, nonbridging oxygen hole centers, and peroxy radicals, are responsible for the efficient trapping of electrons. The observed discharging is believed to be related to the annealing of the defects.

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Charging Phenomena and Charge Compensation in AES on Metal Oxides and Silica

Cited by 29 publications

References 15 publications

Oxygen environmental Auger electron spectroscopy: Eliminating the electron beam effects on Al2O3 during Auger analysis

Oxygen environmental Auger electron spectroscopy: Eliminating the electron beam effects on Al2O3 during Auger analysis

Charging in scanning electron microscopy “from inside and outside”

Charge trapping and charge compensation during Auger electron spectroscopy on SiO2

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