Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist

Kamiyanagi, H.; Shibata, Satoshi

doi:10.1109/iwjt.2005.203883

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“…Charging of SiO 2 by ion implantation was reported in [4] where the destruction of integrated circuits by ion implantation due to charge effects and change of the photoresist characteristic was investigated, but no data regarding the stability of this charge phenomenon were reported. In [5], the charging of SiO 2 film electrets by corona discharge was discussed, especially the improvement of the stability of charge storage by further ion implantation with argon.…”

Section: Introductionmentioning

confidence: 99%

Properties of SiO₂electret films charged by ion implantation for MEMS-based energy harvesting systems

Mescheder

Müller

Baborie

et al. 2009

J. Micromech. Microeng.

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This paper presents the results of charging SiO 2 thin film electret by ion implantation. A maximum charge density of 16 mC m −2 has been shown using 500 nm thermal oxide. Charge is reproducible and stable in time. Two types of ions were used for ion implantation: phosphorus (P + ) and boron (B + ). Directly after implantation, it was found that charging with B + resulted in more stable surface potential compared to charging with P + , but after 50 days the difference is negligible. The extrapolated long-term stability of SiO 2 electrets charged by ion implantation is around 1 year. SiO 2 is a promising electret for energy harvesting, which can be charged in a reproducible and stable way by ion implantation. The results are compared to corona charging of SiO 2 . The developed process can be used to realize vibration-based capacitive energy harvester systems using CMOS-compatible processes.

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Section: Introductionmentioning

confidence: 99%

Properties of SiO₂electret films charged by ion implantation for MEMS-based energy harvesting systems

Mescheder

Müller

Baborie

et al. 2009

J. Micromech. Microeng.

View full text Add to dashboard Cite

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Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist

Cited by 1 publication

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Properties of SiO₂electret films charged by ion implantation for MEMS-based energy harvesting systems

Properties of SiO₂electret films charged by ion implantation for MEMS-based energy harvesting systems

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Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist

Cited by 1 publication

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Properties of SiO2electret films charged by ion implantation for MEMS-based energy harvesting systems

Properties of SiO2electret films charged by ion implantation for MEMS-based energy harvesting systems

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Properties of SiO₂electret films charged by ion implantation for MEMS-based energy harvesting systems

Properties of SiO₂electret films charged by ion implantation for MEMS-based energy harvesting systems