Checked patterned elemental distribution in AlGaAs nanowire branches <i>via</i> vapor–liquid–solid growth

Boras, Giorgos; Yu, Xingxing; Fonseka, H. Aruni; Dong, Zhengchao; Zeng, Haotian; Sanchez, Ana M.; Liu, Huiyun

doi:10.1039/d0nr02577a

Cited by 2 publications

(4 citation statements)

References 41 publications

(78 reference statements)

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“…Specifically, at low Al contents of 10–30%, the percentage of branched structures is low and does not exceed 15%. On the contrary, with increasing Al content (at 40%), the percentage of NWs that develop branches reaches 60% . Notably, the diameter of the NWs was also observed to increase with elevating Al content, due to the trend of this element to adhere to the sidewall facets and incorporate in the lateral shell growth.…”

Section: Resultssupporting

confidence: 76%

“…On the contrary, with increasing Al content (at 40%), the percentage of NWs that develop branches reaches 60%. 46 Notably, the diameter of the NWs was also observed to increase with elevating Al content, due to the trend of this element to adhere to the sidewall facets and incorporate in the lateral shell growth. More details on this phenomenon and the analysis of these unique structures have been described in a previous report by our group.…”

Section: Resultsmentioning

confidence: 98%

“…Notably, the diameter of the NWs was also observed to increase with elevating Al content, due to the trend of this element to adhere to the sidewall facets and incorporate in the lateral shell growth. More details on this phenomenon and the analysis of these unique structures have been described in a previous report by our group . Additionally, the influence of the V/III ratio was examined, as this parameter is crucial for NW growth.…”

Section: Resultsmentioning

confidence: 99%

“…More details on this phenomenon and the analysis of these unique structures have been described in a previous report by our group. 46 Additionally, the influence of the V/III ratio was examined, as this parameter is crucial for NW growth. Consequently, the As flux was modified in order to give V/III ratios of 15, 20, and 35.…”

Section: Resultsmentioning

confidence: 99%

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Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Boras

Fonseka

et al. 2021

J. Phys. Chem. C

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Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison to the previously employed Au-catalyzed approach, as it removes Au contamination issues and renders the structures compatible with complementary metal–oxide–semiconductor (CMOS) technology applications. Structural studies reveal the self-formation of an Al-rich AlGaAs shell, thicker at the NW base and thinning towards the tip, with the opposite behavior observed for the NW core. Wide alloy fluctuations in the shell region are also noticed. AlGaAs NW structures with nominal Al contents of 10, 20, and 30% have strong room temperature photoluminescence, with emission in the range of 1.50–1.72 eV. Individual NWs with an embedded 4.9 nm-thick GaAs region exhibit clear QD behavior, with spatially localized emission, both exciton and biexciton recombination lines, and an exciton line width of 490 μeV at low temperature. Our results demonstrate the properties and behavior of the AlGaAs NWs and AlGaAs/GaAs NWQDs grown via the self-catalyzed approach for the first time and exhibit their potential for a range of novel applications, including nanolasers and single-photon sources.

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Section: Resultssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Boras

Fonseka

et al. 2021

J. Phys. Chem. C

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Quantum dots synthesis within ternary III–V nanowire towards light emitters in quantum photonic circuits: a review

Boras,

Zeng,

Park

et al. 2024

Nanotechnology

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The positioning of quantum dots (QDs) in nanowires (NWs) on-axis has emerged as a controllable method of QD fabrication that has given rise to structures with exciting potential in novel applications in the field of Si photonics. In particular, III-V NWQDs attract a great deal of interest owing to their vibrant optical properties, high carrier mobility, facilitation in integration with Si and bandgap tunability, which render them highly versatile. Moreover, unlike Stranski-Krastanov or self-assembled QDs, this configuration allows for deterministic position and size of the dots, enhancing the sample uniformity and enabling beneficial functions. Among these functions, single photon emission has presented significant interest due to its key role in quantum information processing. This has led to efforts for the integration of ternary III-V NWQD non-classical light emitters on-chip, which is promising for the commercial expansion of quantum photonic circuits. In the current review, we will describe the recent progress in the synthesis of ternary III-V NWQDs, including the growth methods and the material platforms in the available literature. Furthermore, we will present the results related to single photon emission and the integration of III-V NWQDs as single photon sources in quantum photonic circuits, highlighting their promising potential in quantum information processing. Our work demonstrates the up-to-date landscape in this field of research and pronounces the importance of ternary III-V NWQDs in quantum information and optoelectronic applications.

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Checked patterned elemental distribution in AlGaAs nanowire branches via vapor–liquid–solid growth

Abstract: Morphology, crystal defects and crystal phase can significantly affect the elemental distribution of ternary nanowires (NWs). Here, we report the synergic impact of the structure and crystal phase on the...

Cited by 2 publications

References 41 publications

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Quantum dots synthesis within ternary III–V nanowire towards light emitters in quantum photonic circuits: a review

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