Chemical and electronic properties of the ITO/Al2O3 interface

Gassenbauer, Yvonne; Wachau, André; Klein, Andreas

doi:10.1039/b822848e

Cited by 43 publications

(46 citation statements)

References 55 publications

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“…The shift of the lone pair state to higher binding energy for surface segregated Sb 3+ in Sb-doped SnO 2 is a consequence of the higher nuclear charge on Sb as compared with Sn, and by an extension of these arguments it can be seen that In [129] and similar structure has been found in subsequent studies using laboratory [56,57,181,187] or synchrotron based [197] UV photoemission. The conduction band structure is in general very weak but resonances may be observed around the In 4p core threshold [197].…”

Section: Materials Preparationmentioning

confidence: 63%

“…[185]. Structure in the bandgap has also been noted in He(I) and He(II) photoemission spectra of ITO thin films prepared by RF sputtering in an Ar or N 2 atmosphere [186][187][188]. The structure was found to be suppressed by addition of O 2 to the sputtering gas for ITO films studied in situ [56,181,189] or by subsequent annealing in air [189].…”

Section: Materials Preparationmentioning

confidence: 85%

“…Although the influence of plasmons or final state screening on core XPS of ITO and related materials is now gaining acceptance in the literature [187,[207][208][209], some papers published since 2,000 have questioned the importance of these effects [186,210]. Indeed the very existence of low energy conduction electron plasmons in ITO has been called into question [186]-a standpoint that is very difficult to understand given the pivotal importance of plasmons in determining the optical properties of ITO.…”

Section: Satellite Structure In Core Level Photoemission Of Doped Sammentioning

confidence: 96%

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Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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This article reviews the impact of defects and doping on the surface electronic structure of indium oxide, a wide gap oxide semiconductor which under degenerate doping becomes an important transparent conducting material. Topics covered include recent evidence for carrier accumulation at In 2 O 3 surfaces when there is a low bulk doping level and the profound effects of doping on core and valence photoemission spectra. The importance of molecular beam epitaxy in growth of single crystal samples is emphasised. IntroductionTransparent conducting oxides (TCOs) combine the usually orthogonal properties of optical transparency in the visible region with a high electrical conductivity [1][2][3][4]. TCOs already find widespread application as the window electrode in display devices including liquid crystal displays and electroluminescent display devices. A TCO electrode is also an essential component in many designs of solar cell [5,6]. In addition there is a growing interest in "transparent electronics" where TCO materials are employed in a more active role, for example in light emitting diodes [7] or lasers operating in the ultraviolet regime. The TCO market is worth around $1.6 billion per annum, with upward of 80 % of this sum based on LCD displays. Indium oxide (In 2 O 3 ) is amenable to n-type doping with Sn to give a prototype TCO usually-but somewhat misleadingly-referred to as indium tin oxide or ITO. At present ITO dominates the TCO market as the material offers a better combination of conductivity and transparency than alternatives such as doped ZnO or SnO 2 . In principle, doped CdO could achieve better performance [8], but Cd is highly toxic. Despite some recent reports of respiratory disease and even deaths [9] among workers in the ITO industry, indium is generally regarded as relatively

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Section: Materials Preparationmentioning

confidence: 63%

Section: Materials Preparationmentioning

confidence: 85%

Section: Satellite Structure In Core Level Photoemission Of Doped Sammentioning

confidence: 96%

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Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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“…Three independent interface experiments, i.e. ITO deposit‐ed on BST 21, Al 2 O 3 deposited on ITO 22, and Al 2 O 3 deposited on BST 4 have been performed. The obtained energy band alignment is illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

Absorption von CO₂ mittels wässriger Natronlauge – Experimente und Simulationen mit dem Ansatz der Hydrodynamischen Analogien

Yazgi

Tran

Ausner

et al. 2015

Chemie Ingenieur Technik

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Ein Ansatz zur Simulation von Trennprozessen in Packungskolonnen basiert auf Analogien zwischen komplexen, in realen Apparaten vorliegenden, und geometrisch vereinfachten Strömungsformen und ist daher als Ansatz der Hydrodynamischen Analogien (HA) bekannt. In dieser Arbeit wurde der HA-Ansatz für die Modellierung reaktiver Absorption von CO 2 in wässriger Natronlauge bei vorliegender turbulenter Gasströmung verwendet. Es wurden umfangreiche Absorptionsversuche durchgeführt, bei denen CO 2 -Konzentrationen in der Gasphase über die Kolonnenhöhe vermessen wurden. Der HA-Ansatz konnte anhand dieser experimentellen Daten erfolgreich validiert werden. Absorption of CO 2 Using Aqueous Sodium Hydroxide -Experiments and Simulations Based on the Hydrodynamic Analogies ApproachAn approach for the simulation of separation processes in packed columns is based on hydrodynamic analogy between complex flow pattern in real equipment units and geometrically simplified model flow and is known as the Hydrodynamic Analogy (HA) approach. In this work, the HA approach was applied to reactive absorption of CO 2 in aqueous sodium hydroxide solution under turbulent gas flow conditions. An extensive experimental study was carried out to measure the CO 2 concentration profiles along the column height. These data provided a basis for a successful validation of the HA approach.

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“…[15][16][17][18] Figure 1. Modification of ITO was performed with 16-phosphonohexadecanoic acid (COOH) to functionalize the surface with terminal carboxylic acid groups.…”

Section: Sample Preparationmentioning

confidence: 99%

Photoelectronic characterization of heterointerfaces.

Brumbach¹

2012

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In many devices such as solar cells, light emitting diodes, transistors, etc., the performance relies on the electronic structure at interfaces between materials within the device. The objective of this work was to perform robust characterization of hybrid (organic/inorganic) interfaces by tailoring the interfacial region for photoelectron spectroscopy. Self-assembled monolayers (SAM) were utilized to induce dipoles of various magnitudes at the interface. Additionally, SAMs of molecules with varying dipolar characteristics were mixed into spatially organized structures to systematically vary the apparent work function. Polymer thin films were characterized by depositing films of varying thicknesses on numerous substrates with and without interfacial modifications. Hard X-ray photoelectron spectroscopy (HAXPES) was performed to evaluate a buried interface between indium tin oxide (ITO), treated under various conditions, and poly(3-hexylthiophene) (P3HT). Conducting polymer films were found to be sufficiently conducting such that no significant charge redistribution in the polymer films was observed. Consequently, a further departure from uniform substrates was taken whereby electrically disconnected regions of the substrate presented ideally insulating interfacial contacts. In order to accomplish this novel strategy, interdigitated electrodes were used as the substrate. Conducting fingers of one half of the electrodes were electrically grounded while the other set of electrodes were electronically floating. This allowed for the evaluation of substrate charging on photoelectron spectra (SCOPES) in the presence of overlying semiconducting thin films. Such an experiment has never before been reported. This concept was developed out of the previous experiments on interfacial modification and thin film depositions and presents new opportunities for understanding chemical and electronic changes in a multitude of materials and interfaces. 4 ACKNOWLEDGMENTSMany people helped with various aspects of this project. I would like to thank

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Chemical and electronic properties of the ITO/Al2O3 interface

Cited by 43 publications

References 55 publications

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Absorption von CO₂ mittels wässriger Natronlauge – Experimente und Simulationen mit dem Ansatz der Hydrodynamischen Analogien

Photoelectronic characterization of heterointerfaces.

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Chemical and electronic properties of the ITO/Al2O3 interface

Cited by 43 publications

References 55 publications

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Absorption von CO2 mittels wässriger Natronlauge – Experimente und Simulationen mit dem Ansatz der Hydrodynamischen Analogien

Photoelectronic characterization of heterointerfaces.

Contact Info

Product

Resources

About

Absorption von CO₂ mittels wässriger Natronlauge – Experimente und Simulationen mit dem Ansatz der Hydrodynamischen Analogien