Chemical and structural analysis of low-temperature excimer-laser annealing in indium-tin oxide sol-gel films

Kim, Hyuk Jin; Maeng, Min Jae; Park, J. H.; Kang, Min Gyu; Kang, Chong Yun; Park, Yongsup; Chang, Young Jun

doi:10.1016/j.cap.2018.12.005

Cited by 25 publications

(12 citation statements)

References 37 publications

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“…All the samples are confirmed to be nanocrystalline and appear uniform across the entire sample depth, both before and after ReLA at . It should be noted that in previous reports on LA of ITO, structural changes have been observed at lower fluences 16 , 17 , 41 . The deviation between these reports and this work could may be due to the different thickness of the ITO film and the intermediate SiO 2 layer (acting as a thermal barrier and an optical spacer), and/or the growth process (solution versus sputtering) 16 , 17 , 41 .…”

Section: Resultsmentioning

confidence: 77%

“…It should be noted that in previous reports on LA of ITO, structural changes have been observed at lower fluences 16 , 17 , 41 . The deviation between these reports and this work could may be due to the different thickness of the ITO film and the intermediate SiO 2 layer (acting as a thermal barrier and an optical spacer), and/or the growth process (solution versus sputtering) 16 , 17 , 41 . However, we also note that an increased ambient pressure is typically employed to suppress and/or eliminate sample ablation during LA 42 , 43 .…”

Section: Resultsmentioning

confidence: 77%

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Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

Hillier

Patsalas

Karfaridis

et al. 2022

Sci Rep

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Transparent conductive oxides are appealing materials for optoelectronic and plasmonic applications as, amongst other advantages, their properties can be modulated by engineering their defects. Optimisation of this adjustment is, however, a complex design problem. This work examined the modification of the carrier transport properties of sputtered tin-doped indium oxide (ITO) via laser annealing in reactive environments. We relate the optical modifications to the structural, compositional, and electronic properties to elucidate the precise mechanisms behind the reactive laser annealing (ReLA) process. For sufficiently high laser fluence, we reveal an ambient-dependent and purely compositional modulation of the carrier concentration of ITO thin films. Hereby, we demonstrate that ReLA utilises the precise energy delivery of photonic processing to enhance the carrier mobility and finely tune the carrier concentration without significantly affecting the crystal structure. Exploitation of this phenomena may enable one to selectively engineer the optoelectronic properties of ITO, promising an alternative to the exploration of new materials for optoelectronic and photonic applications.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 77%

Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

Hillier

Patsalas

Karfaridis

et al. 2022

Sci Rep

View full text Add to dashboard Cite

show abstract

“…It should be noted that in previous reports on LA of ITO, structural changes have been observed at lower fluences. 16,17,41 The deviation in this work may be due to the change in the thickness of the ITO, the presence of an intermediate SiO2 layer (a thermal barrier for heat dissipation and an optical spacer), and/or the solution process, which were used in the previous reports. 16,17,41 However, we also note that an increased ambient pressure is typically employed to suppress and/or eliminate sample ablation during LA.…”

Section: Optoelectronic Properties Of the Rela-ito Filmsmentioning

confidence: 99%

“…16,17,41 The deviation in this work may be due to the change in the thickness of the ITO, the presence of an intermediate SiO2 layer (a thermal barrier for heat dissipation and an optical spacer), and/or the solution process, which were used in the previous reports. 16,17,41 However, we also note that an increased ambient pressure is typically employed to suppress and/or eliminate sample ablation during LA. 42,43 We conclude that ReLA, up to and including 125 mJcm −2 in either 5% H2 in N2 or 100% O2, is a "low-stress" process and the modifications to the optoelectronic properties induced during ReLA cannot be explained through structural changes.…”

Section: Optoelectronic Properties Of the Rela-ito Filmsmentioning

confidence: 99%

“…7 The OI and OIII components are related to the metal-oxide binding (In-O) 45 and surface contaminants, 46 respectively. 41 The origin of the OII peak is commonly associated with oxygen atoms existing near to a neighbouring oxygen vacancy. However, this is still under debate, and it is also possible that the OII peak is assigned to the amorphous phase of ITO and/or oxygen atoms bound to Sn.…”

Section: Compositional Rela-induced Modificationsmentioning

confidence: 99%

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Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

Hillier

Patsalas

Karfaridis

et al. 2022

Preprint

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Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Chemical and structural analysis of low-temperature excimer-laser annealing in indium-tin oxide sol-gel films

Cited by 25 publications

References 37 publications

Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

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