Chemical Bath Deposition

Guire, Mark R. De; Bauermann, Luciana Pitta; Parikh, Harshil

doi:10.1007/978-3-211-99311-8_14

Cited by 21 publications

(8 citation statements)

References 62 publications

(68 reference statements)

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“…Thin films are usually the most useful form for electronic device applications, and will be the focus in this Review. Thin film transparent chalcogenides have been synthesized by (1) physical vapor deposition (PVD), including sputtering, pulsed laser deposition (PLD), and thermal or electron-beam evaporation, , molecular beam epitaxy (MBE), , by (2) chemical vapor deposition, usually involving some reactions between precursors, such as atomic layer deposition (ALD), , metal organic chemical vapor deposition (MOCVD), and plasma-enhanced chemical vapor deposition (PECVD), or by (3) solution processes, including spray pyrolysis, sol–gel, , and chemical bath deposition (CBD) . Postdeposition treatments can be applied to enhance crystallinity or introduce dopants, such as exposure to gas (e.g., sulfurization and selenization, common in chalcopyrite materials) and rapid thermal annealing, and films can be doped via ion implantation or diffusion.…”

Section: Materials Properties and Research Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Materials Properties and Research Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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“…During deposition, the solution parameters (concentration, temperature, and pH) can be expected mainly to dictate the particle size and ultimate crystalline form of the coating [ 30 ]. The effects of the surfactant layer will be seen primarily in the extent to which it promoted the attachment of the solid particles from the deposition medium and affected their distribution on the substrate (in this case, a NiO–GDC composite).…”

Section: Discussionmentioning

confidence: 99%

Nanocrystalline ceria coatings on solid oxide fuel cell anodes: the role of organic surfactant pretreatments on coating microstructures and sulfur tolerance

Tang

Guire

2014

Beilstein J. Nanotechnol.

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SummaryTreatments with organic surfactants, followed by the deposition of nanocrystalline ceria coatings from aqueous solution, were applied to anodes of solid oxide fuel cells. The cells were then operated in hydrogen/nitrogen fuel streams with H2S contents ranging from 0 to 500 ppm. Two surfactant treatments were studied: immersion in dodecanethiol, and a multi-step conversion of a siloxy-anchored alkyl bromide to a sulfonate functionality. The ceria coatings deposited after the thiol pretreatment, and on anodes with no pretreatment, were continuous and uniform, with thicknesses of 60–170 nm and 100–140 nm, respectively, and those cells exhibited better lifetime performance and sulfur tolerance compared to cells with untreated anodes and anodes with ceria coatings deposited after the sulfonate pretreatment. Possible explanations for the effects of the treatments on the structure of the coatings, and for the effects of the coatings on the performance of the cells, are discussed.

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“…A high orientation or low intensity of not-expected X-ray diffraction peaks confirm a better crystalline structure or a reduction of the contaminants, respectively. On the other hand, the bandgap energy, absorbance, transmittance and reflectance are optical properties related with the quality of the deposited film, as well as with the stoichiometry [194]. In the following sections the use of low temperatures (room conditions) for the CBD and the generations of SDD and SC for some specific materials will be presented as recent topics on the CBD area.…”

Section: Some Recent Advances On Chemically Deposited Materialsmentioning

confidence: 99%

The chemical process for materials deposition in aqueous solution: a review

Arias¹,

González-Chan

Várguez³

et al. 2022

Surface Engineering

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The material deposition in aqueous solution, also known as chemical bath deposition (CBD), is a well-established technique for the fabrication of semiconducting thin films. The success of the CBD technique is mainly based on the relatively easy implementation and operation requirements. The CBD has importantly contributed to the development of sensors, optical devices and solar cells applications. In this review, the origins and current state of the art of the CBD technique, the involved physicochemical processes, the growing mechanisms, and the analytical techniques for the estimation of optimal physicochemical conditions for the film deposition are discussed. Emphasis on authors' experience on CBD of CdS, ZnS, Zn (OH) 2 , and ZnO films are here highlighted, following methodologies for a high control of the deposited materials, such as the species distribution diagrams and the solubility curves.

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Chemical Bath Deposition

Cited by 21 publications

References 62 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

Nanocrystalline ceria coatings on solid oxide fuel cell anodes: the role of organic surfactant pretreatments on coating microstructures and sulfur tolerance

The chemical process for materials deposition in aqueous solution: a review

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