2013
DOI: 10.1063/1.4822197
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Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

Abstract: AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4Â10 20 cm -3 was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm 2 . These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

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Cited by 2 publications
(2 citation statements)
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“…These details will be discussed later in this paper. A 2013 report by 3IT-US achieved a p-type carbon doped AlGaAs/GaAs TJ with both a high aluminum composition >40% and a doping concentration reaching up to the 10 20 cm −3 range using CBE [22]. This report clarified that the tunneling current is not significantly affected by aluminum concentration due to high doping levels decreasing the tunneling barrier width.…”
Section: Studies Of Various Tunnel Junctionsmentioning
confidence: 78%
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“…These details will be discussed later in this paper. A 2013 report by 3IT-US achieved a p-type carbon doped AlGaAs/GaAs TJ with both a high aluminum composition >40% and a doping concentration reaching up to the 10 20 cm −3 range using CBE [22]. This report clarified that the tunneling current is not significantly affected by aluminum concentration due to high doping levels decreasing the tunneling barrier width.…”
Section: Studies Of Various Tunnel Junctionsmentioning
confidence: 78%
“…Later experimental work achieved this current [47]. Recent work has shown that highly doped p-type AlGaAs containing a high aluminum content will produce junctions of equal electrical performance to those fabricated with lower aluminum content while providing higher transparency [22]. The first all high bandgap TJ with a high peak tunneling current was The AlGaAs/InGaP junction which was fabricated by ALE [16].…”
Section: Discussionmentioning
confidence: 99%