Chemical bonding investigation of amorphous hydrogenated Si–N alloys deposited by plasma immersion ion processing

Jacobsohn, L.G.; Schulze, R.; Daemen, Luke L.; Afanasyev-Charkin, I.V.; Nastasi, M.

doi:10.1016/j.tsf.2005.07.166

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Cited by 3 publications

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“…6B) Sisamples show the most important peak at about 101.8 eV. This binding energy is very close to one obtained for Si 3 N 4 , of about 101.9 eV [14]. The peak is more intense for the de-hydrogenated sample compared to the re-hydrogenated one, in good agreement with the XRD data.…”

Section: Tablesupporting

confidence: 87%

Thermodynamic destabilization of Li–N–H system by Si addition

Palade¹,

Lungu²,

Husanu³

2010

Journal of Alloys and Compounds

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Section: Tablesupporting

confidence: 87%

Thermodynamic destabilization of Li–N–H system by Si addition

Palade¹,

Lungu²,

Husanu³

2010

Journal of Alloys and Compounds

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Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

Matsumoto

Inayoshi

Suemitsu

et al. 2008

Applied Surface Science

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Low Temperature Deposition of Si-based Thin Films on Plastic Films Using Pulsed-Discharge PECVD under Near Atmospheric Pressure

Matsumoto¹,

Inayoshi²,

Suemitsu³

et al. 2008

MRS Proc.

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Low temperature (150 °C) deposition of doped and undoped polycrystalline Si (poly-Si) as well as SiN X films on polyethylene terephthalate (PET) films has been achieved with practical deposition rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH 4 diluted in H 2 for poly-Si while N 2 has been additionally used for SiN x . No inert gases such as He was used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. With this technique, deposition of poly-Si thin film with virtually no incubation layer is possible, which in the case of P-doped poly-Si shows a Hall mobility (μ H ) of 1.5 cm 2 /V·s.

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Chemical bonding investigation of amorphous hydrogenated Si–N alloys deposited by plasma immersion ion processing

Cited by 3 publications

References 20 publications

Thermodynamic destabilization of Li–N–H system by Si addition

Thermodynamic destabilization of Li–N–H system by Si addition

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

Low Temperature Deposition of Si-based Thin Films on Plastic Films Using Pulsed-Discharge PECVD under Near Atmospheric Pressure

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