Chemical bonding states in the amorphous Si<sub>x</sub>C<sub>1–x</sub>: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra

Katayama, Yoshifumi; Usami, Katsuhisa; Shimada, Toshikazu

doi:10.1080/13642818108221899

Cited by 147 publications

(28 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is consistent with previous work in XPS of a-Si : C : H [15] and indicates that as the hydrocarbon content of the source gas decreases, the plasmon loss energy decreases from a value which indicates a film with high carbon content to a value more consistent with a-Si : C : H.…”

Section: Resultssupporting

confidence: 89%

“…Different methods for the production of a-Si : C : H films have previously been employed. These include plasma assisted CVD [7][8][9][10][11][12][13][14][15], sputtering techniques [15][16][17][18]19], ion implantation [20] and laser assisted deposition [-4, 21, 22]. Previous studies of silicon carbide have involved the use of several techniques, such as XPS [3, 6-8, 11, 12, 15-17, 21-23], AES [8,12,18,[20][21][22][23], electron diffraction [5,13], optical absorption [10], IR spectroscopy [3,4,12,15], Raman spectroscopy [11,12], scanning electron microscopy [12,21], X-ray diffraction [-3, 4, 21, 22], Rutherford backscattering [16], laser ionization mass analysis [21], EELS [9] and EXELFS [19].…”

mentioning

confidence: 99%

See 1 more Smart Citation

An EELS and EXELFS study of amorphous hydrogenated silicon carbide

et al. 1994

View full text Add to dashboard Cite

Abstract.A series of thin films of amorphous hydrogenated silicon carbide (a-Si : C : H) produced by RF plasma decomposition of propane and silane has been studied by electron energy-loss spectroscopy (EELS) and extended energyloss fine structure (EXELFS) studies. The composition of the films has been determined by EELS and the nearest neighbour spacings have been determined by EXELFS. These results, along with the energy of the plasmon loss peaks, have been compared with the deposition conditions for each film. The results show that for a large gas ratio (C3Hs/(C3H8 + SiH4) ) the films have a high proportion of carbon and are similar to a-C : H in structure, whereas those films prepared with Y = 0.4 or 0.5 have nearest neighbour spacings consistent with those for tetrahedrally bonded carbon. The films prepared with lowest Y have nearest neighbour spacings similar to those for amorphous silicon carbide. The results for a-Si : C : H have been compared with the results of EELS and EXELFS of CVD diamond films, amorphous carbon and amorphous silicon.

show abstract

Section: Resultssupporting

confidence: 89%

mentioning

confidence: 99%

An EELS and EXELFS study of amorphous hydrogenated silicon carbide

et al. 1994

View full text Add to dashboard Cite

show abstract

“…Plasma enhanced chemical vapor deposition (PECVD) has been used to grow a-SiC:H thin films from mixtures of silane (SiH 4 ) or disilane (Si 2 H 6 ) with CxHy (CH 4 , C 2 H 2 , C 2 H 4 , C 2 H 6 , C 3 H 8 and C 4 H 10 ), including or not other gases like Ar or He in the reaction chamber [1][2][3][4][5]. Among the carbon gases used to deposit these films, methane (CH 4 ) is frequently used.…”

Section: Introductionmentioning

confidence: 99%

Amorphous silicon carbide films prepared by H2 diluted silane–methane plasma

Liao

Diao

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

“…[12][13][14][15][16][17][18][19] These works have involved the use of different techniques such as x-ray scattering, extended x-ray absorption fine structure, x-ray photoelectron spectroscopy, Auger electron spectroscopy, Raman scattering, and infrared spectroscopy, observing a strong dependence of the chemical ordering and crystalline structure of the layers on the deposition conditions. Moreover, some of the experimental results are still not clear, being the subject of controversy.…”

Section: Introductionmentioning

confidence: 99%

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Serre

Calvo‐Barrio

Pérez-Rodrı́guez

et al. 1996

Journal of Applied Physics

View full text Add to dashboard Cite

The analysis of SiC films obtained by carbon ion implantation into amorphous Si ͑preamorphized by Ge ion implantation͒ has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x-ray photoelectron spectroscopy ͑XPS͒. The data obtained show the formation of an amorphous Si 1Ϫx C x layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si-C bonds in addition to the Si-Si and C-C ones in the implanted region, with a composition in the range 0.35 Ͻ x Ͻ 0.6. This points out the existence of a partial chemical order in the layer, in between the cases of perfect mixing and complete chemical order. Recrystallization of the layers has been achieved by ion-beam induced epitaxial crystallization ͑IBIEC͒, which gives rise to a nanocrystalline SiC layer. However, recrystallization is not complete, observing still the presence of Si-Si and C-C bonds in an amorphous phase. Moreover, the distribution of the different bonds in the IBIEC processed samples is similar to that from the as-implanted ones. This suggests that during IBIEC homopolar bonds are not broken, and only regions with dominant Si-C heteropolar bonds recrystallize.

show abstract

Chemical bonding states in the amorphous Si_xC_1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra

Cited by 147 publications

References 12 publications

An EELS and EXELFS study of amorphous hydrogenated silicon carbide

An EELS and EXELFS study of amorphous hydrogenated silicon carbide

Amorphous silicon carbide films prepared by H2 diluted silane–methane plasma

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Contact Info

Product

Resources

About

Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra

Cited by 147 publications

References 12 publications

An EELS and EXELFS study of amorphous hydrogenated silicon carbide

An EELS and EXELFS study of amorphous hydrogenated silicon carbide

Amorphous silicon carbide films prepared by H2 diluted silane–methane plasma

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Contact Info

Product

Resources

About

Chemical bonding states in the amorphous Si_xC_1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra