2008
DOI: 10.1002/sia.2856
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Chemical characterisation of evaporated In2Sx buffer layers in Cu(In,Ga)Se2 thin‐film solar cells with SNMS and SIMS

Abstract: For the series production of Cu(In,Ga)Se 2 (CIGS)-based thin-film solar cells it is desirable to replace the thin CdS buffer layer between absorber and transparent front contact by non-toxic, low-absorbing semiconductors. In 2 S 3 , deposited by atomic layer deposition, has already been qualified as an alternative buffer material. In this work, results of indium sulphide buffer layers deposited by thermal evaporation are presented. Pressed powders with different compositions and morphology were used for evapor… Show more

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Cited by 13 publications
(10 citation statements)
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“…The deposition of both the chalcopyrite absorber and the buffer layer following a vacuum process should offer the possibility of an entire vacuum process line between patterning 1 (i.e., P1: Mo‐scribe) and patterning 2 (i.e., P2: Cu(In,Ga)(S,Se) 2 /buffer/r‐ZnO scribe). It has been demonstrated during the last decade that Cu(In,Ga)Se 2 solar cells buffered with In 2 S 3 grown by evaporation can reach performances close to those of a Cu(In,Ga)Se 2 /CBD‐CdS reference cells 64–70. Record efficiencies of 15·2% on Cu(In,Ga)Se 2 /evaporated‐In 2 S 3 /ZnO structure has been recently obtained 66.…”
Section: Physical Vapor Depositionmentioning
confidence: 99%
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“…The deposition of both the chalcopyrite absorber and the buffer layer following a vacuum process should offer the possibility of an entire vacuum process line between patterning 1 (i.e., P1: Mo‐scribe) and patterning 2 (i.e., P2: Cu(In,Ga)(S,Se) 2 /buffer/r‐ZnO scribe). It has been demonstrated during the last decade that Cu(In,Ga)Se 2 solar cells buffered with In 2 S 3 grown by evaporation can reach performances close to those of a Cu(In,Ga)Se 2 /CBD‐CdS reference cells 64–70. Record efficiencies of 15·2% on Cu(In,Ga)Se 2 /evaporated‐In 2 S 3 /ZnO structure has been recently obtained 66.…”
Section: Physical Vapor Depositionmentioning
confidence: 99%
“…The critical issue of this process is that the quality of the In 2 S 3 powder can vary over the long deposition duration. This affects both the performance of the cells and the stability of the process 66–68. The other possibility to deposit In 2 S 3 by evaporation is the co‐evaporation of elemental indium and sulfur, which also yields high efficiency devices 65.…”
Section: Physical Vapor Depositionmentioning
confidence: 99%
“…In the present work, we will show that by limiting these two drawbacks, we could successfully reach 13.6% cell efficiency for the RF-sputtered In 2 S 3 buffer layer, which is the highest cell efficiency among all reported studies in literature for In 2 S 3 buffer layers deposited by sputtering. 17 Moreover, in the present work we applied atom probe tomography (APT) technique, 18 which is contrary to any other existing experimental techniques such as Auger electron spectroscopy (AES), 19 secondary ion mass spectroscopy (SIMS), 20 and energy dispersive X-ray spectroscopy (EDX) is able to trace the elemental redistributions at the subnanometer level without being influenced by the CIGSe surface roughness. Based on these APT investigations, the sputtering-and annealing-induced intermixing phenomenon between the In 2 S 3 buffer layer and the CIGSe absorber is studied here.…”
Section: Introductionmentioning
confidence: 99%
“…Surface analysis methods like SNMS, SIMS, Auger electron spectroscopy and X‐ray photoelectron spectroscopy (XPS) are particularly well suited for quantitative depth profiling of thin films with thicknesses below 100 nm . For buffer layers in CIGS solar cells, this has been demonstrated for In 2 S 3 by SNMS, CdS buffers by XPS and Zn(O,S) layers by XPS . In addition, elemental distribution profiles were extracted from EDX analyses within a transmission electron microscope of CdS, Zn(O,S) and In 2 S 3 layers on CIGS.…”
Section: Resultsmentioning
confidence: 99%
“…This value is in the range of 5 to 25 nm reported by Kötschau and Schock for CuInSe 2 absorbers with very similar Cu contents compared to our CIGS films. [38] A Cu depletion in the CIGS surface region at the absorber/buffer interface was also detected for CBD Zn(O,S), [30] for CdS, [37] and for In 2 S x , [28] sometimes in combination with a strong Cu diffusion into the buffer layer after heat treatment. [34] For calculations of band alignments at the absorber/buffer interface, it is important to incorporate the different electronic properties of the Cu-depleted layer, especially the higher band gap energy.…”
Section: Mass Interferences For Zn(os)mentioning
confidence: 99%