Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

Frigeri, C.; Shakhmin, Alexey A.; Vinokurov, D. A.; Zamoryanskaya, M. V.

doi:10.1186/1556-276x-6-194

Cited by 4 publications

(2 citation statements)

References 25 publications

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“…The S f versus N d data from Fig. 3 for the case of upright growth and an intermediate low doped layer are used to calculate J 01 from (3). From the Hovel model equations [12], [17], the EQE can be calculated and by integrating over the AM1.5G spectrum, J sc is obtained.…”

Section: B Cell Optimizationmentioning

confidence: 99%

Characterization of Interface Recombination Velocity in GaAs/InGaP Heterojunction Solar Cells Using Dark Curve Measurements

Bauhuis

Trinito

Mulder

et al. 2022

IEEE J. Photovoltaics

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In this article, a method for obtaining the interface recombination velocity in a solar cell from a measurement of the dark curve is presented. The front interface recombination S f between window and emitter of a GaAs-InGaP heterojunction cell passivated by an AlInP window is used to demonstrate the method. By choosing a proper emitter thickness, the equation for the dark saturation current J 01 reduces to two terms, one related to the bulk recombination and the other to the interface recombination. The growth direction (either upright or inverted) is found to have a huge influence on S f as a result of the formation of an interfacial layer in the inverted grown cells. It is also shown that S f and, therefore, the optimum cell design strongly depend on the emitter doping level. Using the obtained S f data, an optimized cell configuration on the substrate and in a thin film has been calculated, leading to a 1% (absolute).

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Section: B Cell Optimizationmentioning

confidence: 99%

Characterization of Interface Recombination Velocity in GaAs/InGaP Heterojunction Solar Cells Using Dark Curve Measurements

Bauhuis

Trinito

Mulder

et al. 2022

IEEE J. Photovoltaics

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“…Such a device is fully compatible with the existing GaAs-based high-electron-mobility transistor (HEMT) technology. Moreover, the GaPSb-based material system may well be of great device applications in heterojunction bipolar transistor (HBT), high-power devices, and nanoelectronics [14-16]. We shall show that the carriers in GaPSb are electrons.…”

Section: Introductionmentioning

confidence: 99%

Electron transport in a GaPSb film

Lin

Wang

et al. 2012

Nanoscale Res Lett

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We have performed transport measurements on a gallium phosphide antimonide (GaPSb) film grown on GaAs. At low temperatures (T), transport is governed by three-dimensional Mott variable range hopping (VRH) due to strong localization. Therefore, electron–electron interactions are not significant in GaPSb. With increasing T, the coexistence of VRH conduction and the activated behavior with a gap of 20 meV is found. The fact that the measured gap is comparable to the thermal broadening at room temperature (approximately 25 meV) demonstrates that electrons can be thermally activated in an intrinsic GaPSb film. Moreover, the observed carrier density dependence on temperature also supports the coexistence of VRH and the activated behavior. It is shown that the carriers are delocalized either with increasing temperature or magnetic field in GaPSb. Our new experimental results provide important information regarding GaPSb which may well lay the foundation for possible GaPSb-based device applications such as in high-electron-mobility transistor and heterojunction bipolar transistors.

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Carrier quenching in InGaP/GaAs double heterostructures

Wells

Driskell

Hudson

et al. 2015

Journal of Applied Physics

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Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm2 in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

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Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

Cited by 4 publications

References 25 publications

Characterization of Interface Recombination Velocity in GaAs/InGaP Heterojunction Solar Cells Using Dark Curve Measurements

Characterization of Interface Recombination Velocity in GaAs/InGaP Heterojunction Solar Cells Using Dark Curve Measurements

Electron transport in a GaPSb film

Carrier quenching in InGaP/GaAs double heterostructures

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