Chemical characterization of gallium droplets grown by LP-MOCVD

Imhoff, L.; Heintz, O.; Gauthier, V.; Lucas, M.C. Marco de; Bourgeois, S.

doi:10.1016/j.apsusc.2006.05.062

Cited by 2 publications

(2 citation statements)

References 24 publications

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“…In addition to SERS in Au and Ag nanoparticles there has been an effort to search for alternative metals [8][9][10][11][12], in particular Al [13][14][15][16], Cu [17], Ni [18] or In [19][20][21]. In addition to these metals gallium (Ga) has emerged as an interesting plasmonic candidate [22][23][24][25][26]. Gallium nanoparticles can be interesting since their localized surface plasmon resonances can be tuned from UV to infrared due to the lack of any strong inter-band transitions in this range.…”

Section: Introductionmentioning

confidence: 99%

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MOCVD growth of gallium and indium microparticles for SERS applications

Dumiszewska

Caban

Jóźwik

et al. 2021

J Mater Sci: Mater Electron

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The MOCVD growth of Ga and In microparticles was performed on graphene/SiC substrates. The test of effectiveness of the microparticles grown for SERS was based on the observation of H–Si vibrations on hydrogenated graphene grown on SiC. It was shown by scanning electron microscopy that the Ga or In microparticles grown were in the form of hemispheres with a flat side attached to the substrate. Raman measurements have shown that the effective H–Si SERS signal arises at the edges of the hemisphere microparticles. In addition, it was found that Ga or In microparticles are covered by GaAs or InAs shells, respectively. The presence of GaAs and InAs coverage of metallic microparticles arises from the As contamination of the MOCVD system used for III–V compound growth. However, these coverages do not significantly affect the surface plasmons resonance in the metallic microparticles.

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Section: Introductionmentioning

confidence: 99%

“…Ga nanoparticles can be grown by Joule-effect thermal evaporation [23,27] or by the MOCVD method [22]. Both growth methods produce hemispherical nanoparticles in the form of a liquid Ga core and an outer part composed of gallium oxide which maintains the stability of the structure [28].…”

Section: Introductionmentioning

confidence: 99%

MOCVD growth of gallium and indium microparticles for SERS applications

Dumiszewska

Caban

Jóźwik

et al. 2021

J Mater Sci: Mater Electron

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A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering

Chen,

Li,

Xing

et al. 2024

APL Materials

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GaN, a third-generation semiconductor, has gained widespread attention owing to its high temperature resistance, wide bandgap, and high critical breakdown electric fields. Magnetron sputtering has a broad potential in the field of low-cost growth of GaN on account of high efficiency, superior quality, and convenient operation. However, challenges caused from the pure Ga targets with a huge refrigeration system need to be resolved for wide practices. Here, a new and cost-effective Ga target for magnetron sputtering was fabricated by utilizing the wetting properties of CuGa2 and Ga. Mixed microcrystalline and amorphous GaN films were obtained via reactive magnetron sputtering employing the Ga target. The average deposition rate is about 1.68 nm/min, and the average roughness is ∼7.45 ± 0.26 nm under 100 W of sputtering power. In addition, the sputtered GaN films were found to be wide-bandgap and p-type semiconductors with high transmittance, as revealed by x-ray photoelectron spectroscopy and absorption spectra. The GaN films display a bandgap of ∼3.60 eV and a transmittance exceeding 88.5% in the visible range. Furthermore, field-effect transistors and metal–semiconductor–metal photodetectors have been fabricated using the obtained GaN films, demonstrating favorable response characteristics. The prospects of microcrystalline/amorphous GaN films in sensing, power devices, and flexible electronics were forecasted. Overall, a low-cost and pervasive route of target fabrication process expands the possibilities of using low melting point metals in magnetron sputtering.

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Chemical characterization of gallium droplets grown by LP-MOCVD

Cited by 2 publications

References 24 publications

MOCVD growth of gallium and indium microparticles for SERS applications

MOCVD growth of gallium and indium microparticles for SERS applications

A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering

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