Chemical Composition Tuning of the Anomalous Hall Effect in Isoelectronic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>L</mml:mi><mml:msub><mml:mn>1</mml:mn><mml:mn>0</mml:mn></mml:msub><mml:msub><mml:mi>FePd</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Pt</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:math>Alloy Films

He, Pimo; Ma, Lei; Shi, Zhong; Guo, Guang‐Yu; Zheng, Jian‐Guo; Xin, Yan; Zhou, Shiming

doi:10.1103/physrevlett.109.066402

Cited by 94 publications

(83 citation statements)

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“…The intrinsic parameter b remarkably increases from 7.83×10 -6 to 8.65 ×10 -5 μΩ -1 .cm -1 as S increases. It has been pointed out that chemical disorder and composition could have pronounced influence on the topology of Fermi surface, 5,[18][19] therefore, we refer that the strong dependence of intrinsic term b on S for our Mn 1.5 Ga films should be attributed to the variation of Fermi surface topology arising from chemical disorder effects. It could be helpful to theoretically repeat the disorder effects on the topology of Fermi surface and intrinsic AHE if a convincing band calculation available.…”

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confidence: 65%

“…[1][2][3][4][5][6][7][8] It is widely accepted that there are three mechanisms responsible for the AHE. The intrinsic AHE arises from the transverse velocity of the Bloch electrons induced by SOI and interband mixing, 9 as experimentally evidenced by quantum anomalous Hall effect.…”

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confidence: 99%

“…17 Noticeably, recent studies in Fe films revealed a negligible contribution of phonon skew scattering and a scaling ρ AH =a 0 ρ xx0 +bρ xx 2 , where a 0 ρ xx0 = α 0 ρ xx0 +βρ xx0 2 is the extrinsic contributions of skew scattering and side jump from static defects. 3 5,[18][19][20] although it is always believed that intrinsic AHE originates from the band effects of perfect crystal and is independent of the disorders. 1,2,9,21 The exploration and clarification of these puzzling and intriguing issues is of fundamental importance for better understanding the AHE and underlying physics, and also for technological applications in sensors, memories and logics.…”

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confidence: 99%

“…24 It should be mentioned that the magnetization and coercivity of each film changes little in the studied temperature range of 2-350 K as revealed by detailed superconducting quantum interference device (SQUID) and PPMS measurements, because of the high Curie temperature, 23 which suggests that influence of T-dependence of saturation magnetization on ρ AH could be neglected. [5][6][7] Figure 2(d) shows the T-dependence of ρ xx for MnGa samples with different S, revealing that all the investigated samples are metallic above 20 K. As shown in Fig. 2(e), with T further decreases toward 2 K, Δρ xx (=ρ xx -ρ xx0 , ρ xx0 is the minimum of ρ xx as shown in the inset) decreases monotonically for each film with S 0.26, whereas metal-insulator transition appears at around 20 (12) K in strongly chemically disordered Mn 1.5 Ga with S=0.…”

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confidence: 99%

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Anomalous Hall effect in epitaxialL10-Mn1.5Ga films with variable chemical ordering

2014

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Abstract： The transport behaviors of weak localization and anomalous Hall effect (AHE) in perpendicularly magnetized L1 0 -Mn 1.5 Ga single-crystalline films are investigated as a function of degree of long-range chemical ordering and temperature. We observed significant weak localization and metal-insulator transition in highly disordered films. Our results provide new evidence that weak localization, phonons and magnons have negligibly smaller effect on extrinsic AHE resistivity than static defects for all the chemical disordered films, the overlook of which in conventional scaling laws may result in significant discrepancies and exponent n beyond 2 when fitting the data. Chemical disorder is found to exhibit strong tailoring effect on both intrinsic and extrinsic σ AH . Our results clarify the role of weak localization, phonons and magnons in AHE and offer a technological engineering approach of the AHE by altering long-range chemical ordering parameter of magnetic materials. Key words：Weak localization, Anomalous Hall effect, Chemical disorder, Perpendicular magnetic anisotropy, PACS: 72.15. Rn, 81.30.Hd, 75.30.Gw a) Author to whom correspondence should be addressed; Electronic mail: jhzhao@red.semi.ac.cnThe anomalous Hall effect (AHE) has attracted much attention due to both the fascinating underlying physics and the great application potential in sensors, memories and logics. [1][2][3][4][5][6][7][8] It is widely accepted that there are three mechanisms responsible for the AHE. The intrinsic AHE arises from the transverse velocity of the Bloch electrons induced by SOI and interband mixing, 9 as experimentally evidenced by quantum anomalous Hall effect. 10 The extrinsic mechanisms of skew scattering and side jump result from the impurity scattering of conduction electrons due to SOI. 11,12 Skew scattering yields a scaling relation between longitudinal resistivity ρ xx (conductivity σ xx =1/ρ xx ) and anomalous Hall resistivity ρ AH (conductivity σ AH ≈ρ AH /ρ xx 2 ) as ρ AH~ρxx , while other two mechanisms give ρ AH~ρxx 2 . Accordingly, scaling laws ρ AH~ρxx n and ρ AH =aρ xx +bρ xx 2 are conventionally used to describe the experimental data.In spite of the extensive studies, a unified scaling of AHE has remained a shortage. In stark contrast to present AHE theories, the exponent n was experimentally observed to be below 1 or beyond 2 in a variety of ferromagnets, e.g. 0.4 in hopping transport-accompanied Fe 3 O 4 films, 13 2.7 (2.85) in (111)-orientated Mn 2.03 Ga (Mn 1.38 Ga) films, 14 2.6 in Fe/Cr multilayers 15 and 3.7 in Co-Ag granular films. 16 Electron localization was recently found to yield a scaling with n=0 in chemically disordered FePt ultrathin films. 17 Noticeably, recent studies in Fe films revealed a negligible contribution of phonon skew scattering and a scaling ρ AH =a 0 ρ xx0 +bρ xx 2 , where a 0 ρ xx0 = α 0 ρ xx0 +βρ xx0 2 is the extrinsic contributions of skew scattering and side jump from static defects. 3 These intriguing observations make the scaling of AHE open questions. On the o...

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Anomalous Hall effect in epitaxialL10-Mn1.5Ga films with variable chemical ordering

2014

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“…In order to control the c-axis to be perpendicular while enhancing the L1 0 ordering, a replacement of Pt site in FePt film with Pd seems useful. Fe(Pt,Pd) films have been prepared on Si substrates with natural oxide layers [10,11] and MgO(001) single-crystal substrates [12,13]. However, there are few reports on the structural analysis by taking into account the c-axis distribution.…”

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confidence: 99%

Fe₅₀Pt_50–xPd_xalloy thin films withL1₀structure epitaxially grown on MgO(001) substrates

Itabashi

Ohtake

Kirino

et al. 2014

EPJ Web of Conferences

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Abstract. Fe 50 Pt 50-x Pd x (at. %, x = 0, 12.5, 25, 37.5, 50) alloy epitaxial films are prepared on MgO(001) substrates at temperatures ranging from room temperature to 600 °C by radio-frequency magnetron sputtering. The effects of substrate temperature and Pd/Pt composition on the order degree, c-axis distribution, and magnetic property are investigated. With increasing the substrate temperature, L1 0 ordering is enhanced for all the compositions. The order degree of film deposited at 600 °C decreases from 0.37 to 0.23 as the x value increases from 0 to 12.5 at. %. With further increasing the x value, the order degree increases up to 0.69. The Fe 50 Pt 50-x Pd x films with x 25 consist of only an L1 0 (001) single-crystal with the c-axis perpendicular to the substrate surface, whereas the films with x < 25 involve two types of L1 0 (100) variant with the c-axis lying in the film plane in addition to L1 0 (001) variant. The c-axis distribution is influenced by the Pd/Pt composition. The magnetic anisotropy is reflecting the c-axis distribution and the order degree.

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Bulk Spin Torque‐Driven Perpendicular Magnetization Switching in L1₀ FePt Single Layer

Tang

Shen

et al. 2020

Advanced Materials

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Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L10 phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L10 FePt magnet, ultimately leading to reversible magnetization switching. The spin torque monotonically increases with increasing FePt thickness, exhibiting a bulk characteristic. Meanwhile, the spin torque effective fields and switching efficiency increase as the FePt approaches higher chemical ordering with stronger spin–orbit coupling. The symmetry breaking that generates spin torque within L10 FePt is shown to arise from an inherent structural gradient along the film normal direction. By artificially reversing the structural gradient, an opposite spin torque effect in L10 FePt is demonstrated. At last, the role of the disorder gradient in generating a substantial torque in a single ferromagnet is supported by theoretical calculations. These results will push forward the frontier of material systems for generating spin torques and will have a transformative impact on magnetic storage and spin memory devices with simple architecture, ultrahigh density, and readily application.

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Chemical Composition Tuning of the Anomalous Hall Effect in IsoelectronicL10FePd1−xPtxAlloy Films

Cited by 94 publications

References 28 publications

Anomalous Hall effect in epitaxialL10-Mn1.5Ga films with variable chemical ordering

Anomalous Hall effect in epitaxialL10-Mn1.5Ga films with variable chemical ordering

Fe₅₀Pt_50–xPd_xalloy thin films withL1₀structure epitaxially grown on MgO(001) substrates

Bulk Spin Torque‐Driven Perpendicular Magnetization Switching in L1₀ FePt Single Layer

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Chemical Composition Tuning of the Anomalous Hall Effect in IsoelectronicL10FePd1−xPtxAlloy Films

Cited by 94 publications

References 28 publications

Anomalous Hall effect in epitaxialL10-Mn1.5Ga films with variable chemical ordering

Anomalous Hall effect in epitaxialL10-Mn1.5Ga films with variable chemical ordering

Fe50Pt50–xPdxalloy thin films withL10structure epitaxially grown on MgO(001) substrates

Bulk Spin Torque‐Driven Perpendicular Magnetization Switching in L10 FePt Single Layer

Contact Info

Product

Resources

About

Fe₅₀Pt_50–xPd_xalloy thin films withL1₀structure epitaxially grown on MgO(001) substrates

Bulk Spin Torque‐Driven Perpendicular Magnetization Switching in L1₀ FePt Single Layer