Chemical Compounds on Substrates

Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory

“…The same slope observed in Figure c indicates the single barrier height between h -BN and graphite for all devices, supporting the idea that the tunneling carrier is a hole, which is also consistent with the previous result in the metal/ h -BN/graphene system . The barrier height for the hole calculated from the band alignment ,, is 3.27 eV, as shown in Figure c. More detailed discussions on the validity of the fitting results are given in Figure S9.…”

Determination of work functions near melting points of refractory metals by using a direct-current arc

“…A comparison of the linear and quadratic graphs shown in figure 3 , and of their f i t precisions, showed only minor differences, indicating that the data essentially conformed to equation (2). The data used to plot the Richardson line a r e subject to systematic pyrometric e r r o r s .…”

“…The standard deviation of the quadratic fit (0.085) is not significantly better than that of the linear fit (0.093), thus indicating the linear f i t to be as precise as the higher degree fit. This linear least-squares f i t was used to determine cp and A in the RichardsonDushman equation (l), which predicts a linear relationship between In j/T2 and e/kT, having a slope of -q and an intercept of In A, in equation (2). From such a f i t of the data in figure 3, over the full temperature range shown, cp = 4.50 volts, and A = 343.9 2 2 A/(cm )(K ).…”

(Ba,Sr)TiO3 Thin Films for Dram’s

“…Therefore, the choice of electrode material is critical in order to achieve low leakage current. The work functions of Pt, and Jr are similar with Ru being slightly smaller [93]. Despite the reported differences in work functions, the leakage current of sputtered BST on Ru bottom electrodes is similar to that ofBST deposited on Pt bottom electrodes [94].…”