Chemical deposition of thallium doped cadmium selenide thin films and their characterization

Hankare, P.P.; Jadhav, Amol R.; Bhuse, Vijaykumar M.; Khomane, A.S.; Garadkar, K. M.

doi:10.1016/s0254-0584(02)00344-9

Cited by 50 publications

(24 citation statements)

References 18 publications

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“…The band gap 'Eg' was determined by extra plotting the straight line to the energy axis whose intercept to the x-axis gives the optical band gap. The band gap of CdSe film was found to be 1.7 eV which agrees with earlier investigators report [11,14,22,25,35].…”

Section: Optical Propertiessupporting

confidence: 91%

“…The 'Ea' was found to be in the range between 0.640 eV in the high temperature region and 0.125 eV in the lower temperature region. The activation energy results were found in good agreement with the other investigator results [35,37]. In thermoelectric power measurements, the open circuit thermo voltage generated by the sample when a temperature gradient is applied across a length of the sample was measured using a potentiometer.…”

Section: Electrical Conductivity and Transport Propertiessupporting

confidence: 84%

“…From the sign of the potentiometer terminal connected at the cold end, one can deduce the sign of the predominant charge carriers. In our investigation of film sample, the negative terminal was connected to the cold; therefore film sample shows n-type of conductivity [22,35,37].…”

Section: Electrical Conductivity and Transport Propertiesmentioning

confidence: 99%

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Structural, optical and electrical characterization of chemically deposited CdSe thin films

Khomane

Hankare

2010

Journal of Alloys and Compounds

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Section: Optical Propertiessupporting

confidence: 91%

Section: Electrical Conductivity and Transport Propertiessupporting

confidence: 84%

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Structural, optical and electrical characterization of chemically deposited CdSe thin films

Khomane

Hankare

2010

Journal of Alloys and Compounds

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“…It is useful to obtain the information of the structural properties of the thin films by XRD measurement. The crystallite size D of the CdS thin films is determined from the (111) peak using the Scherrer formula [15]: (1) where λ is the X-ray wavelength, 0.9 cos D λ β θ = is the Bragg angle, and β is the full width at half maximum (FWHM) of the peak in radians.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence of Nanocrystalline CdS Thin Films Prepared by Chemical Bath Deposition

Park¹

2010

Transactions on Electrical and Electronic Materials

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Nanocrystalline cadmium sulfide (CdS) thin films were prepared using chemical bath deposition in a solution bath containing CdSO 4 , SC(NH 2 ) 2 , and NH 4 OH. The CdS thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). The as-deposited CdS thin film prepared at 80°C for 60 min had a cubic phase with homogeneous and small grains. In the PL spectrum of the 2,900 Å-thick CdS thin film, the broad red band around 1.7 eV and the broad high-energy band around 2.7 eV are attributed to the S vacancy and the band-to-band transition, respectively. As the deposition time increases to over 90 min, the PL intensity from the band-to-band transition significantly increases. The temperature dependence of the PL intensity for the CdS thin films was studied from 16 to 300 K. The E A and E B activation energies are obtained by fitting the temperature dependence of the PL intensity. The E A and E B are caused by the deep trap and shallow surface traps, respectively. From the FTIR analysis of the CdS thin films, a broad absorption band of the OH stretching vibration in the range 3,000-3,600 cm -1 and the peak of the CN stretching vibration at 2,000 cm -1 were found.

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“…Therefore, we planned to deposit CdSe, HgSe and (CdHg)Se under similar set of conditions, by using a relatively new, low temperature, chemical bath method (CBD). The technique is simple, viable compared to the other cost intensive methods and capable of generating alloys without use of sophisticate instrumentation and process control [17][18][19]. A very basic and attractive feature of CBD is the control of spontaneous precipitation of reacting species so that in sufficient space and time, the ions may combines to give continuous film.…”

Section: Introductionmentioning

confidence: 99%

Low temperature synthesis of cubic CdSe, HgSe and (CdHg)Se thin films and their characterization

Bhuse

Hankare

2004

Ionics

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Abstract.A low temperature synthesis of CdSe, HgSe and Cd0.sHg0.sSe alloy thin films in cubic modification under similar set of conditions is presented. The method is based on chemical reaction of complexed cadmium sulphate, mercuric nitrate or mixtures of both with sodium selenosulphate in aqueous ammonical medium at 5 ~ The films were characterized by using XRD, Optical absorption, Electrical measurements AAS and EDAX techniques. The films were found to be uniform, well adherent, dark red, nearly stoichiometric and polycrystalline in cubic form without trace of any hexagonallity. The growth of fihn was found to occurs by ion by ion nucleation. CdSe, HgSe and (CdHg)Se films showed optical band gaps at 1.75 eV, 0.81 eV and 1.34 eV respectively. The electIical conductivity of (CdHg)Se alloy was found to be of the order of 10 -2 (f~cm) ~. The rate of increase of conductivity with temperature was found to reduce with the inclusion of mercury. Thermoelectric study indicated the presence of n-type conduction mechanism for all the films.

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Chemical deposition of thallium doped cadmium selenide thin films and their characterization

Cited by 50 publications

References 18 publications

Structural, optical and electrical characterization of chemically deposited CdSe thin films

Structural, optical and electrical characterization of chemically deposited CdSe thin films

Photoluminescence of Nanocrystalline CdS Thin Films Prepared by Chemical Bath Deposition

Low temperature synthesis of cubic CdSe, HgSe and (CdHg)Se thin films and their characterization

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