Chemical depth profile of ultrathin nitrided SiO2 films

Abstract

Ultrathin nitrided SiO2/Si(001) films were studied using angle-resolved x-ray photoemission spectroscopy. The structure of the oxynitride depended on the nitridation process. Under one type of nitridation the film kept the structure of the SiO2, with N assuming O sites. By taking advantage of the nonuniformity on the chemical depth profile, the Si 2p chemical shift was determined for those Si atoms bonded to three O and one N atom, and for those bonded to two O and two N atoms. The stoichiometry depth profile was recognized through a simple method that allowed the input of physical constrains.

WSe 2 -contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions

“…The analyzer was calibrated with Au, Ag, and Cu foils according to ASTM E1208 [36]. Spectra were deconvolved using AAnalyzer [37], a curve fitting software.…”

Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

“…Active Shirley background and Voigt line shape was employed for peak fitting. 19 Raman and photoluminescence (PL) spectroscopy were employed to investigate the characteristic vibrational modes and optical bandgap of monolayer and bilayer WSe 2 flakes and films before and after 10 min N 2 plasma treatment. For Raman and PL measurements, few layers WSe 2 samples were prepared by mechanically exfoliating the bulk WSe 2 crystal and transferring them to thermally grown 270 nm SiO 2 /Si substrates.…”

Solventless synthesis of ruthenium nanoparticles

“…The base pressure of the analysis chamber was 10 -9 Torr for data acquisition. The XPS core-level peaks were deconvoluted into their various components by using an interactive least-squares computer program AAnalyzer®, Version 1.2 [55].…”