Chemical durability of optical glass

Adachi, S.; Miyade, Eimei; Izumitani, Tetsurô

doi:10.1016/0022-3093(80)90056-3

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A Sio2 Film1

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2024

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“…In figure 9(a), the chemical reaction that takes place between the SiO2 film surface and silica slurry is commonly explained by L.M. Cook [25] and T. Izumitani et al [26]. OHor (OH) 2from slurry attacks the O-Si-O bond and forms a hydration layer.…”

Section: A Sio2 Filmmentioning

confidence: 99%

Enhancement of Selectivity for Chemical Mechanical Polishing by Ultra-High-Dose C and Si Ion Implantation

Yuan,

Omori,

Yamaguchi

et al. 2024

IEEE J. Electron Devices Soc.

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The selectivity of chemical mechanical polishing (CMP) is successfully enhanced due to the modification of the film surface by ultra-high-dose ion implantation for the first time. The removal rate (RR) of CMP for SiO2 and Si3N4 films was changed by implanted ions. On the other hand, polycrystalline silicon (poly-Si) films had no change regardless of ion implantation. When C + is implanted at 3×10 16 ions/cm 2 into SiO2, the RR decreases by about 40% compared with that without implantation. However, no significant change was observed after the implantation of C + at 1×10 16 ions/cm 2 or Si + to SiO2 and poly-Si films. New findings about CMP mechanism that are against Borst's Langmuir-Hinshelwood model have been made when the film is modified by using high-dose implantation.

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Section: A Sio2 Filmmentioning

confidence: 99%