The initial oxidation of clean, polycrystalline α-Th from background CO/CO 2 and saturation of the Th surface by O 2 has been examined by angle-resolved Auger electron spectroscopy (ARAES) and time of flight secondary ion mass spectrometry (ToF-SIMS). Following dissociative adsorption of very low doses of background CO/CO 2 (<1 L), the carbon surface population was dominant and spontaneously formed thorium carbide. The accompanying oxygen population increased at a rate roughly one-third that of the carbon, suggesting simultaneous oxygen incorporation into the bulk. To further corroborate the surface kinetics of adsorbed oxygen, O 2 was admitted, following heating and sputter cleaning of the Th; some oxygen atoms continued to diffuse into the bulk until formation of stoichiometric ThO 2 at ∼37 L. ARAES measurements showed an oxygen concentration gradient in the near-surface region confirming rapid oxygen incorporation at low doses; however, once the surface is saturated, virtually no variation in the oxygen intensity is observed. AES and ToF-SIMS depth profiling revealed complete oxide formation to a depth of 2 nm.