Chemical Etching of CdSb Single Crystals: Thermodynamic Analysis

Dremlyuzhenko, S. G.; Voloshchuk, A. G.; Gritsyuk, B. N.; Раренко, И. М.; Strebezhev, V. N.

doi:10.1023/b:inma.0000008907.53950.5e

Cited by 3 publications

(4 citation statements)

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“…The thickness of the near-surface CdSb oxide layer after mechanical polishing was 32.5 nm. The thickness of the near-surface CdSb oxide layer after chemicalmechanical polishing was 7 nm [9]. Thus, the chemical-mechanical polishing method allows minimizing the thickness of the damaged surface layer.…”

Section: Resultsmentioning

confidence: 99%

“…From the examination of the CdSb-Н 2 О diagram it follows that for each value of the potential the mechanism of CdSb oxidation is defined by the pН value. With regard to the characteristics of the etchants [2,9], it can be considered that the results of the analysis of the ϕ-рН diagram allow explaining the mechanism of interaction between CdSb and solutions of already known compositions, as well as predicting and creating new compositions of etchants.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of CdSb surfaces after different processing methods

Dremlyuzhenko¹

2010

Chem. Met. Alloys

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The effect of different processing methods on the surface of CdSb crystals has been studied. Studies by the electron Auger-spectroscopy method have shown the presence of etchant components in the near-surface oxide layer. Chemical-mechanical polishing with an alkaline solution of colloidal silica allows obtaining an oxide layer of minimum thickness and a contaminated surface of close to stoichiometric composition.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of CdSb surfaces after different processing methods

Dremlyuzhenko¹

2010

Chem. Met. Alloys

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“…Estimating the Pourbaix diagram for these materials by simply combining the diagrams of each constituent element predicts that a passivating oxide is formed by the group III element for neutral pH ranges. [15,16] The group V element may not play a considerable role since most of the oxidation products are much more soluble in water than those of the group III. [10,15] The formation of a passivating oxide in NaOCl / citric acid solutions is supported by the free-etching experiments of each material.…”

Section: Discussionmentioning

confidence: 99%

Chemical Mechanical Polishing of Exfoliated III-V Layers

2008

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The chemical mechanical polishing of III-V materials including GaAs, InP, InAs, and GaSb is investigated with sodium hypochlorite and citric acid solutions. It is found that the surfaces can be polished to below 0.5 nm RMS surface roughness without the induction of crystalline damage using similar abrasive-free polishing solutions for all the materials with controlled polishing rates of 10 nm / min which is important for touch polishing of exfoliated III-V layers. The optimal composition of the slurry is adjusted for the particular material. A balance between reduced sub-surface mechanical damage and smooth surface morphology is obtained by adjusting the amount of citric acid. However, the damage-free planarization in these cases may be aided by an oxide formation as predicted by Pourbaix diagrams. Additionally, triple axis x-ray diffraction is found to be an extremely sensitive, nondestructive method for evaluating damage induced by the CMP process.

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“…Актуальным является изучение влияния лазерной обработки на улучшение совершенства гетерограницы и параметров гетеропереходов различных полупроводников. Этот вопрос мало изучен по отношению к монокристаллам и слоям CdSb и ZnSb, а также твердым растворам Cd x Zn 1-x Sb [1,2]. Влияние легирования различными примесями p и n-областей таких гетеропереходов на их свойства также недостаточно исследовано.…”

Section: Introductionunclassified