Chemical etching of silicon by CO2-laser-induced dissociation of NF3

Brannon, James H.

doi:10.1007/bf00615136

Cited by 18 publications

(7 citation statements)

References 30 publications

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“…In some previous papers, , the Si−O bond breaking by neutral CF m ( m = 4−1) and NF n ( n = 3−1) was theoretically investigated. The main result that CF 2 is the most efficient molecule for SiO 2 etching is in accordance with LASER experiments . The reliability of the used quantum chemical method was demonstrated for the systems HF + Si − and HF/HCl + SiO 2 …”

Section: Introductionsupporting

confidence: 73%

“…CF 2 , CF, NF, and N are desorbed into the gas phase. CF 2 is a very efficient etchant molecule as found both experimentally 7 and theoretically. 5,6 However, the formed carbon species are also able to polymerize.…”

Section: ‚‚‚O 4 Si-f-afmentioning

confidence: 79%

“…The main result that CF 2 is the most efficient molecule for SiO 2 etching is in accordance with LASER experiments. 7 The reliability of the used quantum chemical method was demonstrated for the systems HF + Si [8][9][10] and HF/ HCl + SiO 2 . 11 Theoretical investigations to the reactions of CF m + (m ) 3-1) and NF n + (n ) 2-1) 12 showed that at low temperature the SiO 2 surface can be blocked by CF 3 + and CF 2 + .…”

Section: Introductionmentioning

confidence: 99%

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Mechanisms of SiO₂ Etching: Ab Initio Calculations on the Reactions of CF_m^- (m = 3−1) and NF_n^- (n = 2, 1) Ions with Local Surface Models

Jenichen¹

1997

J. Phys. Chem. B

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The mechanisms of SiO2 etching by CF m - (m = 3−1) and NF n - (n = 2,1) are investigated by applying quantum chemical ab initio methods on local molecular surface models. From the calculated energetic data of intermediate hypercoordinated centers formed by adsorption of the negatively charged ions, the reaction behavior at the surface is estimated. The CF m - and NF n - ions act as blockers for Si centers, provide chemisorbed F- ions, or enable the Si−O bond cleavage. At higher temperatures (energy supply of about 37 kcal/mol), the blocking ions desorb and Si−O bonds break.

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Section: Introductionsupporting

confidence: 73%

Section: ‚‚‚O 4 Si-f-afmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

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Mechanisms of SiO₂ Etching: Ab Initio Calculations on the Reactions of CF_m^- (m = 3−1) and NF_n^- (n = 2, 1) Ions with Local Surface Models

Jenichen¹

1997

J. Phys. Chem. B

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“…Etching of silicon in NF3 may be induced either by UV irradiation perpendicular to the surface15,46 or infrared irradiation parallel to the surface. 47 The etching appears to be due primarily to the fluorine atom released in the NF2 photolysis. While silicon is reported44 not to be etched by NF3, recent experiments in our laboratory98 indicate that the NF3-silicon surface reaction does occur.…”

Section: B Nitrogen Fluorides On Siliconmentioning

confidence: 99%

Reactions of photogenerated free radicals at surfaces of electronic materials

Steinfeld¹

1989

Chem. Rev.

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“…The second class is based on a controlled shading of the laser radiation and recording the corresponding intensity reduction of the uncut beam. The shading can be done using a knife edge [5], a translating slit [6], a pinhole [7,8], a rotating mirror [9] or a wire [10]. The third class is based on spectroscopic [11,12] or thermographic [13,14] methods.…”

Section: Introductionmentioning

confidence: 99%

Profiling of micrometer-sized laser beams in restricted volumes

et al. 2012

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We present a method for determining the three-dimensional intensity distribution of directed laser radiation with micrometer resolution in restricted volumes. Our method is based on the incoupling and guiding properties of optical fibers, with the current version requiring only a few hundred micrometers across the measuring volume. We characterize the performance of the method and experimentally demonstrate profiling of micrometer-sized laser beams. We discuss the limiting factors and routes toward a further increase of the resolution and beam profiling in even more restricted volumes. Finally, as an application example, we present profiling of laser beams inside a micro ion trap with integrated optical fibers.

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Chemical etching of silicon by CO2-laser-induced dissociation of NF3

Cited by 18 publications

References 30 publications

Mechanisms of SiO₂ Etching: Ab Initio Calculations on the Reactions of CF_m^- (m = 3−1) and NF_n^- (n = 2, 1) Ions with Local Surface Models

Mechanisms of SiO₂ Etching: Ab Initio Calculations on the Reactions of CF_m^- (m = 3−1) and NF_n^- (n = 2, 1) Ions with Local Surface Models

Reactions of photogenerated free radicals at surfaces of electronic materials

Profiling of micrometer-sized laser beams in restricted volumes

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Chemical etching of silicon by CO2-laser-induced dissociation of NF3

Cited by 18 publications

References 30 publications

Mechanisms of SiO2 Etching: Ab Initio Calculations on the Reactions of CFm- (m = 3−1) and NFn- (n = 2, 1) Ions with Local Surface Models

Mechanisms of SiO2 Etching: Ab Initio Calculations on the Reactions of CFm- (m = 3−1) and NFn- (n = 2, 1) Ions with Local Surface Models

Reactions of photogenerated free radicals at surfaces of electronic materials

Profiling of micrometer-sized laser beams in restricted volumes

Contact Info

Product

Resources

About

Mechanisms of SiO₂ Etching: Ab Initio Calculations on the Reactions of CF_m^- (m = 3−1) and NF_n^- (n = 2, 1) Ions with Local Surface Models

Mechanisms of SiO₂ Etching: Ab Initio Calculations on the Reactions of CF_m^- (m = 3−1) and NF_n^- (n = 2, 1) Ions with Local Surface Models