Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers

Liu, Neng; Dubowski, Jan J.

doi:10.1016/j.apsusc.2012.12.007

Cited by 12 publications

(9 citation statements)

References 47 publications

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“…These experiments have revealed that laser irradiation in air leads to the formation of the InP x O y compound on the surface of a cap InP material, while irradiation in water leads to only a partially decomposed InP cap whose stoichiometry is restored following the rapid thermal annealing (RTA) step. Consistent with this observation are relatively large bandgap blue shifts (:130 nm) found in microstructures processed in air with the excimer UV-Laser-QWI technique [25,26]. An example of the successful application of such an approach for device fabrication are high-intensity InGaAsP/InP laser diodes [27].…”

Section: Introductionmentioning

confidence: 69%

“…Samples were irradiated with a fixed pulse fluence of 155 mJ/cm 2 and the intermixing amplitude was controlled by changing the total number of irradiating pulses. While lower laser fluence irradiation has been reported to promote intermixing [25], this particular value was chosen based on experimental evidence indicating that a slightly increased fluence improves intermixing homogeneity within the processed site. The number of pulses delivered by the laser on the sample surface ranged from 1 to 150.…”

Section: Methodsmentioning

confidence: 99%

“…The influence of different environments on UV-Laser-QWI, such as air, SiO 2 and deionized water has been investigated, demonstrating significant blue shifts with a minimal modification of the quality of InP/InGaAs/InGaAsP QW microstructures [23][24][25]. These experiments have revealed that laser irradiation in air leads to the formation of the InP x O y compound on the surface of a cap InP material, while irradiation in water leads to only a partially decomposed InP cap whose stoichiometry is restored following the rapid thermal annealing (RTA) step.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices

Beal¹,

Aimez²,

Dubowski³

2015

Opt. Express

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Excimer (ultraviolet) laser-induced quantum well intermixing (UV-Laser-QWI) is an attractive technique for wafer level post-growth processing and fabrication of a variety of monolithically integrated photonic devices. The results of UV-Laser-QWI employed for the fabrication of multibandgap III-V semiconductor wafers have demonstrated the attractive character of this approach although the process accuracy and reproducibility have remained relatively weakly covered in related literature. We report on a systematic investigation of the reproducibility of this process induced with a KrF excimer laser. The influence of both the irradiation with different laser doses and the annealing temperatures on the amplitude of intermixing in InGaAs/InGaAsP/InP quantum well heterostructures has been evaluated based on the photoluminescence measurements. Under optimized conditions, the process allows to blue shift the bandgap of a heterostructure by more than 100 nm with a remarkable 5.3% relative standard deviation.

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Section: Introductionmentioning

confidence: 69%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices

Beal¹,

Aimez²,

Dubowski³

2015

Opt. Express

Self Cite

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“…However, the formation of bubbles on samples irradiated with N>200 pulses, and a related uncontrolled modification of the sample surface morphology prevented us from collecting reliable data under such conditions. Using an approach described elsewhere 22,32 , we estimated that an ArF laser irradiation at 65 mJ/cm 2 induces peak temperature on the surface of Si comparable to the methanol boiling point, i.e., 65 °C, as referenced 33 . Thus, irradiation with greater laser fluences is expected to induce the formation of bubbles.…”

Section: Representative Resultsmentioning

confidence: 99%

“…We established that UV laser irradiation of III-V semiconductors in deionized (DI) water decreases surface oxides and carbides, while the water adsorbed on semiconductor surface increases 22 . A strongly hydrophobic Si surface (CA~103°) was obtained by ArF laser irradiation of Si samples in methanol in our recent work 23 .…”

Section: Introductionmentioning

confidence: 99%

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Liu

Moumanis

Dubowski

2015

JoVE

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The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H 2 O 2 /H 2 O solution did not show measurable change in their initial contact angle (CA) ~75°. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H 2 O 2 /H 2 O solution at 250 and 65 mJ/cm 2 , respectively, has decreased the CA to near 15°, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer's surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH 3 OH) using ArF laser operating at pulse fluence of 65 mJ/cm 2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103°. The XPS results indicate ArF laser induced formation of Si-(OCH 3 ) x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH 3 radicals. Video LinkThe video component of this article can be found at

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Bandgap Engineering of Quantum Semiconductor Microstructures

Dubowski¹

2021

Handbook of Laser Micro- And Nano-Engineering

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Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers

Cited by 12 publications

References 47 publications

Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices

Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Bandgap Engineering of Quantum Semiconductor Microstructures

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