Chemical mechanical polishing of silicon wafers using developed uniformly dispersed colloidal silica in slurry

Xie, Wenxiang; Zhang, Zhenyu; Wang, Li; Cui, Xiaoxiao; Yu, Shiqiang; Su, Hongjiu; Wang, Shudong

doi:10.1016/j.jmapro.2023.01.007

Cited by 19 publications

(5 citation statements)

References 33 publications

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“…Then, the polishing pad strips away the oxidized layer from the surface of the workpiece, exposing the unreacted surface of the wafer, ensuring the smooth progress of the CMP process. Xie et al [43] developed a novel polishing slurry and discovered that potassium ions effectively enhance the MRR during the CMP process. This slurry consists of monodisperse colloidal silica, organic/inorganic acids, and inorganic salts.…”

Section: Chemical Mechanical Polishingmentioning

confidence: 99%

“…When the potassium ion concentration reached 125 mmol/L, the MRR of CMP silicon wafers increased by 53.42%, reaching 1778.71 Å/min. Additionally, the surface roughness Sa Xie et al [43] developed a novel polishing slurry and discovered that potassium ions effectively enhance the MRR during the CMP process. This slurry consists of monodisperse colloidal silica, organic/inorganic acids, and inorganic salts.…”

Section: Chemical Mechanical Polishingmentioning

confidence: 99%

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Recent Development of Abrasive Machining Processes Enhanced with Non-Newtonian Fluids

Zhu,

He,

et al. 2024

Coatings

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Abrasive machining processes have long been integral to various manufacturing industries, enabling precise material removal and surface finishing. In recent years, the integration of non-Newtonian fluids has emerged as a promising strategy to enhance the performance and efficiency of these processes. This review paper provides a comprehensive overview of the current state of research on abrasive machining processes, including abrasive lapping, abrasive polishing, and chemical mechanical polishing, and then analyzes in detail the abrasive machining processes enhanced with non-Newtonian fluids. It explores the fundamental principles underlying the rheological behavior of non-Newtonian fluids and their application in abrasive machining, with a focus on shear-thickening fluids. The paper will begin by introducing the abrasive machining processes, including abrasive lapping, abrasive polishing, and chemical mechanical polishing. Then, the current research status of non-Newtonian fluids will be comprehensively analyzed, and we will explore the enhancement of abrasive machining processes with non-Newtonian fluids. Finally, the paper will conclude with a discussion of the future directions and challenges in the field of abrasive machining enhanced with non-Newtonian fluids. Overall, this review aims to provide valuable insights into the potential benefits, limitations, and opportunities associated with the use of non-Newtonian fluids in abrasive machining, paving the way for further research and innovation in this promising area of manufacturing technology.

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Section: Chemical Mechanical Polishingmentioning

confidence: 99%

Section: Chemical Mechanical Polishingmentioning

confidence: 99%

Recent Development of Abrasive Machining Processes Enhanced with Non-Newtonian Fluids

Zhu,

He,

et al. 2024

Coatings

View full text Add to dashboard Cite

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“…Song et al have reported that the strong oxidant H 2 O 2 can improve the MRR of Si CMP, with the most significant effect at a concentration of 1 vol% [ 15 ]. Xie et al pointed out that cations such as Na + , K + , NH 4 + , etc., are able to increase the MRR of Si CMP [ 16 , 17 ] while allowing the slurry to maintain good dispersion. Additionally, sorbitol, gluconic acid, citric acid, and ammonium citrate were found to be effective in improving the removal rate of Si CMP, particularly ammonium citrate [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments

Lin,

Zhu,

Huang

et al. 2024

Nanomaterials

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Polyamines have become important chemical components used in several integrated circuit manufacturing processes, such as etching, chemical mechanical polishing (CMP), and cleaning. Recently, researchers pointed out that polyamines can be excellent enhancers in promoting the material removal rate (MRR) of Si CMP, but the interaction mechanism between the polyamines and the silicon surface has not been clarified. Here, the micro-interaction mechanisms of polyamines, including ethylenediamine (EDA), diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), and pentaethylenehexamine (PEHA), with the Si(1, 0, 0) surface were investigated through molecular dynamics (MD) simulations using the ReaxFF reactive force field. Polyamines can adsorb onto the Si(1, 0, 0) surface, and the adsorption rate first accelerates and then tends to stabilize with the increase in the quantity of -CH2CH2NH-. The close connection between the adsorption properties of polyamines and the polishing rate has been confirmed by CMP experiments on silicon wafers. A comprehensive bond analysis indicates that the adsorption of polyamines can stretch surface Si–Si bonds, which facilitates subsequent material removal by abrasive mechanical wear. This work reveals the adsorption mechanism of polyamines onto the silicon substrate and the understanding of the MRR enhancement in silicon CMP, which provides guidance for the design of CMP slurry.

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“…Then, deposit SiO2 and smooth the surface with chemical mechanical polishing (CMP). The surface roughness of the oxide is less than 1 nm after CMP [43][44][45][46]. The thickness of the SiO2 layer above the top Si layer is controlled to be 0.18 μm, which is the commonly used thickness in foundries such as CUMEC.…”

mentioning

confidence: 99%

Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure

Jiang,

Zhang,

Liu

2024

IEEE Photonics J.

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Silicon nitride (SiN) plays a critical role in silicon photonics because of its lower refractive index, low waveguide loss, broad operating bandwidth and compatibility with complementary metal oxide semiconductor (CMOS) fabrication process. Here, we propose a polarization-independent subwavelength grating (SWG) edge coupler with high efficiency based on SiN-Si dual-stage structure with a length of only 315.8 μm. Such a structure can be fabricated on 8-inch silicon photonics pilot lines and doesn't require special fabrication processes for making it suspended. We simulate the minimum TE/TM light coupling loss from a standard SMF-28 fiber to be 0.61 dB/0.95 dB with polarization dependent loss (PDL) less than 0.4 dB in the whole band between 1500 nm and 1600 nm.

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Chemical mechanical polishing of silicon wafers using developed uniformly dispersed colloidal silica in slurry

Cited by 19 publications

References 33 publications

Recent Development of Abrasive Machining Processes Enhanced with Non-Newtonian Fluids

Recent Development of Abrasive Machining Processes Enhanced with Non-Newtonian Fluids

Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments

Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure

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