Chemical mechanical polishing: Theory and experiment

Zhao, Dewen; Lu, Xinchun

doi:10.1007/s40544-013-0035-x

Cited by 164 publications

(72 citation statements)

References 89 publications

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“…A deliberate running-in process with controlled wear at the level of asperities of the mating surfaces is beneficial for all of the following machine operations. In some advanced surface finishing processes, such as lapping and chemical mechanical planarization (CMP), a proper wear rate is definitely required for maintaining an acceptable level of productivity [116,117]. In a machinery system, there are a number of contacting interfaces distributed throughout many locations, and different interfaces at the different locations of the machine have different roles and require different desired friction coefficient values.…”

Section: Significance Of Active Controlmentioning

confidence: 99%

Boundary lubrication by adsorption film

2015

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A complete understanding of the mechanism of boundary lubrication is a goal that scientists have been striving to achieve over the past century. Although this complicated process has been far from fully revealed, a general picture and its influencing factors have been elucidated, not only at the macroscopic scale but also at the nanoscale, which is sufficiently clear to provide effective instructions for a lubrication design in engineering and even to efficiently control the boundary lubrication properties. Herein, we provide a review on the main advances, especially the breakthroughs in uncovering the mysterious but useful process of boundary lubrication by adsorption film. Despite the existence of an enormous amount of knowledge, albeit unsystematic, acquired in this area, in the present review, an effort was made to clarify the mainline of leading perspectives and methodologies in revealing the fundamental problems inherent to boundary lubrication. The main content of this review includes the formation of boundary film, the effects of boundary film on the adhesion and friction of rough surfaces, the behavior of adsorption film in boundary lubrication, boundary lubrication at the nanoscale, and the active control of boundary lubrication, generally sequenced based on the real history of our understanding of this process over the past century, incorporated by related modern concepts and prospects.

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Section: Significance Of Active Controlmentioning

confidence: 99%

Boundary lubrication by adsorption film

2015

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“…As an ultra-precision processing technique, chemical mechanical polishing (CMP) technique has been widely used in semiconductor fabrication. CMP combines the synergistic effect of chemical etching and mechanical abrasion, and can achieve both local and global planarization of the substrate surface [14][15][16][17]. Recently, the application of CMP technique has been extended to other areas, such as high value-added and precise instruments.…”

Section: Introductionmentioning

confidence: 99%

Chemical mechanical polishing of steel substrate using colloidal silica-based slurries

Jiang

Luo

2015

Applied Surface Science

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“…In general, CMP depends on the synergy between chemical and mechanical interactions near the interface between workpiece and polishing pad. Although CMP process is intuitively quite simple, achieving a more detailed understanding has been limited primarily by the large number of input variables in the polishing process [2]. The input variables including the polishing slurry parameters, polishing pad parameters and polishing process parameters that determine the performance of CMP.…”

Section: Introductionmentioning

confidence: 99%

Material removal model of chemical mechanical polishing for fused silica using soft nanoparticles

Liu

Chen

2016

Int J Adv Manuf Technol

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Fiber arrays are used to connect arrayed waveguide chips. The end-faces of fiber array components are multimaterials non-uniform surfaces. Their low polishing quality has become a bottleneck that restricts coupling performance of integrated photo-electronic devices. The chemical mechanical polishing (CMP) is normally used to improve the polishing quality of the end-faces of fiber array components. It is very important to optimize process parameters by researching the mechanical behavior of nanoparticles and material microstructure evolution on the CMP interfaces. Based on the elastic and hyper-elastic contact of the soft polishing nanoparticles with fused silica and polishing pad, respectively, the material removal mechanism at molecular scale of polishing process for fused silica using nanoparticles is investigated, and the material removal rate model is also derived by using Arrhenius theory and molecule vibration theory. Theoretical and experimental results show that the material is mainly removed by the interfacial tribo-chemical effect between polishing nanoparticles and fused silica during CMP process. The penetration depth of a single nanoparticle inside the fused silica is at molecular scale, and the superficial molecules of fused silica are removed by chemical reactions because of enough energy obtained. The material removal rate of fused silica during CMP process is determined by the polishing pressure, the chemical reagents and its concentration, and the relative movement speed between the fused silica workpiece and the polishing pad.

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Chemical mechanical polishing: Theory and experiment

Cited by 164 publications

References 89 publications

Boundary lubrication by adsorption film

Boundary lubrication by adsorption film

Chemical mechanical polishing of steel substrate using colloidal silica-based slurries

Material removal model of chemical mechanical polishing for fused silica using soft nanoparticles

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