2018
DOI: 10.1021/acs.chemmater.8b03149
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Chemical Modification Mechanisms in Hybrid Hafnium Oxo-methacrylate Nanocluster Photoresists for Extreme Ultraviolet Patterning

Abstract: The potential implementation of extreme ultraviolet (EUV) lithography into next generation device processing is bringing urgency to identify resist materials that optimize EUV lithographic performance. Inorganic/organic hybrid nanoparticles or clusters constitute a promising new class of materials, with high EUV sensitivity from the core and tunable chemistry through the coordinating ligands. Development of a thorough mechanistic understanding of the solubility switching reactions in these materials is an esse… Show more

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Cited by 42 publications
(59 citation statements)
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“…Since conventional photoresists based on light elements exhibit low EUV absorptivity, new photoresist materials that incorporate elements with high EUV photon absorption cross‐section, such as metallic elements, are attracting much interest in the EUVL field , . Yet, while the inorganic elements in these materials are considered responsible for the photon capture, the mechanism that leads to the solubility change is mainly determined by the reactivity of their organic components , …”
Section: Introductionmentioning
confidence: 99%
“…Since conventional photoresists based on light elements exhibit low EUV absorptivity, new photoresist materials that incorporate elements with high EUV photon absorption cross‐section, such as metallic elements, are attracting much interest in the EUVL field , . Yet, while the inorganic elements in these materials are considered responsible for the photon capture, the mechanism that leads to the solubility change is mainly determined by the reactivity of their organic components , …”
Section: Introductionmentioning
confidence: 99%
“…The latter is highly relevant since EUV exposure is performed under high vacuum, which may act as a driving force for ligands loss and undesired aggregation of the inorganic clusters. 16,22 The evolution of the thin films after different treatments was analysed by UV-vis absorption and FTIR spectroscopy. Figure 6.…”
Section: Stability Studiesmentioning
confidence: 99%
“…On the other hand, the introduction of MA ligands having a terminal double bond is anticipated to provide an effective solubility switch arising from the cross-linking of these double bonds. 4,16 The study of the EUV lithographic performance on Zn-based oxoclusters featuring both types of ligands, as well as their shelf life, will be used to shed light on importance of the selection of proper ligands for an optimal design of hybrid EUV resists. New developers that can have specific interactions with this type of hybrid materials are also explored to improve the contrast of the material.…”
Section: Introductionmentioning
confidence: 99%
“…[5][6][7] However, some works have evidenced that the organic shell can play a more active role in the patterning mechanism. 2,[8][9][10][11] The organic moieties can also promote the formation of new bonds, especially when they have terminal double bonds that are prone to undergo radical polymerization. This phenomenon was observed in molecular metallorganic resists (MORE) 8 and in oxoclusters.…”
Section: Introductionmentioning
confidence: 99%
“…This phenomenon was observed in molecular metallorganic resists (MORE) 8 and in oxoclusters. 9,10 Ober's group proposed that EUV irradiation can induce the replacement of ligands in ZrO 2 and HfO 2 nanoparticles by the sulphonic acid generated in the process, thus rendering the solubility switch. 11 Recently, this concept was also applied to smaller molecules based on Zn-dimers where, as a result of EUV exposure, ligands with positive charge density at their terminal positions where replaced with by ligands with terminal negative charge density, leading to a solubility switch due to a change in the molecular polarity.…”
Section: Introductionmentioning
confidence: 99%