Chemical Precipitation Synthesis of Fe, Ni, and Co Doped Zinc Sulphide Nanoparticles

The wide band gap semiconductors like ZnS have gained tremendous response in the optoelectronic applications claiming their significant role in device operability at varied compositions and temperature. We have performed a detailed study of pure and Sn doped ZnS using Perdew-Burkhe-Ernzerhof (PBE) exchange correlation as embodied in Wien2k code. The doping of 6.25% Sn at Zn site, in ZnS has reduced the band gap (Eg) to 1.70 eV from 2.15 eV (Eg for bulk ZnS) thus making it more suitable for the applications of solar cell. Various properties such as band structure, density of states and integrated absorption coefficient depicting their electronic and optical nature are examined. The spectra of absorption curve states the possibility of material to be solar if it lies in the visible spectra range of 0-5 eV.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Chemical Precipitation Synthesis of Fe, Ni, and Co Doped Zinc Sulphide Nanoparticles

Cited by 2 publications

References 11 publications

Impact of bandgap tuning on ZnS for degradation of environmental pollutants and disinfection

Impact of bandgap tuning on ZnS for degradation of environmental pollutants and disinfection

Theoretical analysis of Sn-doped ZnS for optoelectronic applications

Contact Info

Product

Resources

About