Chemical reactivity of CdCl2 wet-deposited on CdTe films studied by X-ray photoelectron spectroscopy

Niles, David W.; Waters, Donna; Rose, Doug

doi:10.1016/s0169-4332(98)00340-7

Cited by 53 publications

(19 citation statements)

References 24 publications

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“…Figure 15 shows the emission spectra of O 1s core level for samples A, B, C, and D. The peak intensity for sample D is higher than that for samples A, B, and C. The oxygen peak can be resolved into two components for all the four samples, one is at 530.3 eV from the O-Te and another one is at 532.4 eV from the O-H environment. 19 The intense 530.3 eV peak of sample D further confirms the promotion of Te oxidation under the wet CdCl 2 treatment compared to in situ treatment. The small peak is due to residual -OH in the film, which can arise due to CH 3 OH and NH 4 OH solvents, which are used for dissolving CdCl 2 and TeO 2 in spray solution.…”

Section: Xps Study For Surface Chemical Environment and Valence Bamentioning

confidence: 70%

“…Niles et al explained the CdTe and CdCl 2 chemical interaction during the heat treatment using x-ray photoelectron spectroscopy (XPS) and showed that the wet CdCl 2 treatment caused formation of native oxide to CdTe, TeCl 2 O, and Cl residues on the surface during annealing. 19 In case of CdCl 2 vapor transport process followed by annealing, the amount of residue on the surface increases with increasing processing temperature. 20 These residues are spatially discrete, located primarily along the grain boundaries, and can penetrate deep below the CdTe surface affecting the CdCl 2 diffusion into CdTe.…”

Section: Introductionmentioning

confidence: 99%

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Effect of in situ CdCl2 treatment on spray deposited CdTe∕CdS heterostructure

Krishna

Dutta

2004

Journal of Applied Physics

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CdTe thin films have been deposited without and with in situ CdCl2 treatment using spray pyrolysis technique. Scanning electron microscopy studies show enhanced grain growth in the presence of CdCl2. Glancing incidence angle x-ray diffraction is used to observe the microstructural changes of CdTe∕CdS heterostructure at different depths by changing the incident angle. Spraying of CdCl2 on CdS prior to CdTe deposition promotes S diffusion throughout CdTe film and also Te diffusion into CdS. There is an associated change in the microstress of the CdTe film at different layers. The films without CdCl2 treatment show compressive microstress varying from −98to−158MPa with increasing incident angle. CdCl2 spray during CdTe deposition leads to compressive microstress varying from −98MPa at the interface to −19MPa near the surface and CdCl2 spray prior to CdTe deposition leads to a mildly tensile stress (+20to+40MPa). Photoluminescence spectra for CdTe films with the in situ treatment show a reduction in the band gap due to S diffusion as well as the reduction in the defect band intensity. An in situ CdCl2 treatment results in less surface oxidation compared to ex situ process, as seen from x-ray photoelectron spectroscopy study. A shift of ∼200meV in the Fermi energy towards the valence band is also observed in valence band spectra after the in situ CdCl2 treatment.

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Section: Xps Study For Surface Chemical Environment and Valence Bamentioning

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Effect of in situ CdCl2 treatment on spray deposited CdTe∕CdS heterostructure

Krishna

Dutta

2004

Journal of Applied Physics

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“…Niles et al had previously proposed such complex chemistries based upon detailed X-ray photoelectron spectroscopy studies of similar films [32].…”

Section: Resultsmentioning

confidence: 99%

Film thickness and chemical processing effects on the stability of cadmium telluride solar cells

2006

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“…Changes in the surface chemistry are driven by the details of the CdCl 2 treatment. An example of this is shown in Figure 6, which shows a photoelectron spectra of the O 1s peak for samples that were unannealed and annealed in oxygen and helium ambients (after Niles et al 43 ). The unannealed sample has peaks at both E b 532 .…”

Section: Cadmium Telluride-based Devicesmentioning

confidence: 99%

Process integration issues in thin‐film photovoltaics and their impact on future research directions

Sheldon

2000

Prog. Photovolt: Res. Appl.

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Thin-®lm device processing relies heavily on the integration of a variety of materials and a wide array of process steps. These include in some instances, the integration of wet' (chemical etching) and`dry' (deposition and plasma etching) process steps. As substrates are stepped through the process sequence, there are many surfaces that ultimately become interfaces that can have a dramatic impact on ultimate device performance. However, in thin-®lm R&D, these issues are not always carefully considered. This can have severe consequences when adapting an R&D-developed process into pilot production, and ®nally, into manufacturing. In this paper, we explore the impact of process integration issues on the microstructure and device performance for three prominent photovoltaic thin-®lm technologies (cadmium telluride, copper indium diselenide, and amorphous silicon). We also consider the impact of these concepts on future research directions in thin-®lm photovoltaics.

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Chemical reactivity of CdCl2 wet-deposited on CdTe films studied by X-ray photoelectron spectroscopy

Cited by 53 publications

References 24 publications

Effect of in situ CdCl2 treatment on spray deposited CdTe∕CdS heterostructure

Effect of in situ CdCl2 treatment on spray deposited CdTe∕CdS heterostructure

Film thickness and chemical processing effects on the stability of cadmium telluride solar cells

Process integration issues in thin‐film photovoltaics and their impact on future research directions

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