Chemical Solution Deposition—Basic Principles

Schwartz, Robert W.; Narayanan, Manoj

doi:10.1002/9780470407790.ch2

Cited by 16 publications

(33 citation statements)

References 95 publications

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“…Therefore, in this study, we introduced the toluene‐methanol mixture as the developing solvent. This binary toluene–methanol mixture, composed of both hydrophobic and hydrophilic solvents, had a good potential to remove a wide range of contaminants in a single step 28, 29. Also, because the introduced solvent that is composed with binary solvent mixture has an azeotropic solvent effect, it facilitates water extraction effectively as well as extraction of hydrophobic components.…”

Section: Resultsmentioning

confidence: 99%

Patterning of Flexible Transparent Thin‐Film Transistors with Solution‐Processed ZnO Using the Binary Solvent Mixture

Kim

Park

Seon

et al. 2011

Adv Funct Materials

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Flexible transparent thin‐film transistors (TTFTs) have emerged as next‐generation transistors because of their applicability in transparent electronic devices. In particular, the major driving force behind solution‐processed zinc oxide film research is its prospective use in printing for electronics. Since the patterning that prevents current leakage and crosstalk noise is essential to fabricate TTFTs, the need for sophisticated patterning methods is critical. In patterning solution‐processed ZnO thin films, several points require careful consideration. In general, as these thin films have a porous structure, conventional patterning based on photolithography causes loss of film performance. In addition, as controlling the drying process is very subtle and cumbersome, it is difficult to fabricate ZnO semiconductor films with robust fidelity through selective printing or patterning. Therefore, we have developed a simple selective patterning method using a substrate pre‐patterned through bond breakage of poly(methyl methacrylate) (PMMA), as well as a new developing method using a toluene–methanol mixture as a binary solvent mixture.

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Section: Resultsmentioning

confidence: 99%

Patterning of Flexible Transparent Thin‐Film Transistors with Solution‐Processed ZnO Using the Binary Solvent Mixture

Kim

Park

Seon

et al. 2011

Adv Funct Materials

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“…Propanediol solvent can form strong chelate complexes with metal cations and is known to fully decompose in both O 2 and inert atmosphere . To form a homogeneous precursor solution and avoid oligomerization and precipitation of polymeric species, 1,2‐propanediol instead of 1,3‐propanediol is preferred .…”

Section: Discussionmentioning

confidence: 99%

Non‐vacuum deposition of Cu(In,Ga)Se₂ absorber layers from binder free, alcohol solutions

Uhl

Fella

Chirilă

et al. 2012

Progress in Photovoltaics

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Non‐vacuum methods for Cu(In,Ga)Se2 (CIGS) absorber deposition have gained wide interest because of their inherent cost and energy saving potential. Here, a solution‐based processing route for CIGS absorber layers is presented that employs binder‐free solutions of metal salts in non‐toxic, alcohol solvents. Despite the low‐boiling‐point nature of the employed solvents, a residual carbon‐rich layer is observed between the CIGS and metal back contact. Based on comprehensive investigations by scanning electron microscopy, energy‐/wavelength dispersive X‐ray spectroscopy, X‐ray fluorescence, X‐ray diffraction, thermogravimetric analysis, differential thermal analysis, and extended X‐ray absorption fine structure spectroscopy, a formation reaction mechanism through intermediate metal–organic complexes is proposed. In this route, the CIGS layer is formed in selenium atmosphere via a gradual decomposition of the carbon‐rich layer comprising carboxylic chelate complexes of metals. A compositional gradient occurs in the CIGS absorber, whereas a significant amount of metals remains in the carbon‐rich layer. The incorporation of Ga into CIGS is affected by the initial salt concentration and the selenization temperature. Fabricated solar cells exhibit active area efficiencies of up to 7.7% on 0.3 cm2 area without anti‐reflection coating, which is among the highest reported efficiencies for solar cells from a solution process with non‐explosive gases or solvents. Copyright © 2012 John Wiley & Sons, Ltd.

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“…The amount of 2-methoxyethanol was used to adjust the viscosity of the solution and to prevent the rapid hydrolysis of titanium (IV) isopropoxide. 28,29 The precursor solution molarity has been shown to have a profound influence on thin film growth mechanisms as well as the film properties. 30,31 Therefore, several solution molarities in the range of 0.20 M (M ¼ moles/liter) and 0.60 M were chosen, building upon our preliminary findings.…”

Section: Experimental Conditionsmentioning

confidence: 99%

Bulk-like dielectric properties from metallo-organic solution–deposited SrTiO3 films on Pt-coated Si substrates

Weiss

Zhang

Spies

et al. 2012

Journal of Applied Physics

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SrTiO 3 (STO) thin films were grown onto Pt/Ti/TiO 2 /SiO 2 /Si and bare Si substrates via metallo-organic solution deposition (MOSD). X ray diffraction, scanning electron microscopy, atomic force microscopy, spectroscopic ellipsometry (SE), and dielectric/insulating measurements were utilized to characterize the STO thin films. By optimizing the solution molarity, it is shown that it is possible to obtain low-frequency dielectric properties in STO thin films on Si substrates that approach those of bulk STO: a dielectric permittivity of 325 at 100 kHz with a tunability of $28% at $650 kV/cm, a low loss (<2%), and a leakage current density of 1.0 Â 10 À6 A/cm 2 at 100 kV/cm. The bulk-like dielectric response of these films is attributed to the elimination of the relatively large in-plane tensile thermal stresses, which arise due to the thermal expansion mismatch between the STO film and the Si substrate. These tensile thermal stresses may be relaxed or completely eliminated through modification of the post-coalescence compressive growth stresses by precursor solution optimization. The SE data indicates that the STO thin films have a refractive index of $2.04 at 633 nm wavelength, which is lower than that of bulk STO. The dielectric, physical, and optical characterization results above the bandgap are consistent, but below the bandgap, the optical-frequency results demonstrate a $25% reduced dielectric response as compared to the bulk, which may be due to the different polarization mechanisms at work at high frequencies. These findings demonstrate that high-quality, electronic-grade, thin film STO films can be grown on Si substrates via the affordable, simple, and industry-standard MOSD technique by carefully adjusting the deposition parameters.

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Chemical Solution Deposition—Basic Principles

Cited by 16 publications

References 95 publications

Patterning of Flexible Transparent Thin‐Film Transistors with Solution‐Processed ZnO Using the Binary Solvent Mixture

Patterning of Flexible Transparent Thin‐Film Transistors with Solution‐Processed ZnO Using the Binary Solvent Mixture

Non‐vacuum deposition of Cu(In,Ga)Se₂ absorber layers from binder free, alcohol solutions

Bulk-like dielectric properties from metallo-organic solution–deposited SrTiO3 films on Pt-coated Si substrates

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Chemical Solution Deposition—Basic Principles

Cited by 16 publications

References 95 publications

Patterning of Flexible Transparent Thin‐Film Transistors with Solution‐Processed ZnO Using the Binary Solvent Mixture

Patterning of Flexible Transparent Thin‐Film Transistors with Solution‐Processed ZnO Using the Binary Solvent Mixture

Non‐vacuum deposition of Cu(In,Ga)Se2 absorber layers from binder free, alcohol solutions

Bulk-like dielectric properties from metallo-organic solution–deposited SrTiO3 films on Pt-coated Si substrates

Contact Info

Product

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About

Non‐vacuum deposition of Cu(In,Ga)Se₂ absorber layers from binder free, alcohol solutions