2006
DOI: 10.1111/j.1551-2916.2005.00838.x
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Chemical Solution Deposition of (Ba1−xSrx) TiO3 Thin Films and Characterization

Abstract: A simple system has been developed for the preparation of stable precursor solutions for dip coating (Ba1−xSrx)TiO3 thin films. From such stable solutions highly crystalline, uniform and crack‐free thin films are obtained by dip coating, followed by annealing at temperatures as low as 600°C. The pyrolysis behavior, crystallization mechanism, and thin film morphology have been studied using thermogravimetric and differential thermal analysis, X‐ray diffraction, and scanning electron microscopy. The dielectric t… Show more

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Cited by 10 publications
(9 citation statements)
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References 39 publications
(36 reference statements)
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“…2-Ethylhexanoate derivatives of alkaline earth metals such as strontium and barium have also been synthesized from their acetates. 45 The ligand-exchange reaction between a metal halide and an alkanoic acid requires the use of triethylamine in order to trap hydrogen chloride. 25 An excess of alkanoic acid is also required in order to avoid the formation of alkanoate-halides.…”
Section: Metathesis Reactionsmentioning
confidence: 99%
“…2-Ethylhexanoate derivatives of alkaline earth metals such as strontium and barium have also been synthesized from their acetates. 45 The ligand-exchange reaction between a metal halide and an alkanoic acid requires the use of triethylamine in order to trap hydrogen chloride. 25 An excess of alkanoic acid is also required in order to avoid the formation of alkanoate-halides.…”
Section: Metathesis Reactionsmentioning
confidence: 99%
“…Thin lms of the strained strontium titanate (SrTiO 3 ) perovskite structure can be used in ferroelectric memory devices such as smart cards and may pave the way for hybrid transistors that would allow for "Instant on" computers. Although these materials can be synthesized by sol gel methods [3][4][5][6][7][8][9] and deposited via solution deposition 10,11 or sputtered from metal targets, 12-14 the aggressive geometry and high aspect ratios of these cutting edge devices will likely require the material to be deposited by chemical vapor (CVD) or atomic layer (ALD) deposition. In MIM capacitors, the dielectric constant (K) for BST can be tuned from under 100 to over 1000 by varying the ratio of barium to strontium.…”
Section: Introductionmentioning
confidence: 99%
“…Consequently, it is necessary to develop lead‐free ferroelectric‐based photonic crystals with excellent tunable PBG properties. Ba 1− x Sr x TiO 3 is considered to be a very promising material due to its unique combination of a large dielectric constant (refractive index), a 14 large electro‐optical coefficient, and low optical losses.…”
Section: Introductionmentioning
confidence: 99%