Chemical solution growth of CeO₂buffer and YBCO layers on IBAD-YSZ/Hastelloy templates

Abstract

Low-cost and commercially viable processes to fabricate coated conductors are necessary for application in electric-power technologies. We demonstrate the chemical solution growth of CeO2 buffer and YBCO layers on IBAD-YSZ/Hastelloy templates. Very good biaxially textured CeO2 buffer layers can be formed by the chemical solution method using inorganic cerium nitrate precursors. Through control of the solution molarity, very uniform, smooth, and dense CeO2 buffer layers can be obtained. Subsequently, the YBCO films were deposited by metallorganic deposition using the trifluoroacetic (TFA-MOD) method. High-critical-current-density (Jc) YBCO films were obtained, with the transport current density of about 1.2 MA cm−2 (77 K, 0 T). The onset transition temperature is as high as 94.5 K, and the transition width is about 1.3 K. Hence, the mature IBAD technique, combined with the low-cost solution method, can provide a very promising robust process for fabrication of low-cost YBCO coated conductor on a large scale.

Magnetic and structural characterization of inkjet-printedTFAYBa2Cu3O7−x/MODCZO/ABADYSZ/SS coated conductors

“…However, the more intense (00l) reflections are still dominant. Wang et al [20] observed the same phenomenon when depositing CeO 2 on IBAD-YSZ/Hastelloy. The explanation may be associated with the recrystallization of the ABAD YSZ layer at the high temperature of 900 • C necessary for the suitable growth of MOD CZO.…”

“…For comparison, PLD-grown YBCO films of ∼1.0 µm on the same kind of ABAD YSZ/SS substrates reach J GB c ∼ 1.2-2.5 MA cm −2 (77 K) [26]. Regarding CSD-grown CCs, Wang et al [20] reported an all-chemical cap + YBCO architecture, TFA YBCO/ MOD CZO/ IBAD YSZ/hastelloy, with J GB c ∼ 1.2 MA cm −2 (77 K) for a 200 nm sample (I c = 24 A/cm-width). On the other hand, Izumi et al [27] reported I c values as high as 735 A/cm-width for 2 µm thick YBCO films, but the employed architecture, TFA YBCO/ PLD CZO/ IBAD GZO/hastelloy, required a PLDdeposited capping layer.…”

Advances in second-generation high-temperature superconducting tapes and their applications in high-field magnets

“…The template and barrier layers are generally oxides, so a seed layer is needed to deposit on the surface of the metal substrate to help the crystallization and growth of oxides. In terms of the scheme selection of the buffer layer, the technical route of one, two, three, or even more layers is adopted [57][58][59][60][61] . The ultimate purpose is to play an influential role in preventing diffusion and providing a high-quality growth template.…”