Chemical stability of a composite material based on silicon and boron nitrides

Kelina, I. Yu.; Ershova, N. I.; Drobinskaya, Y. A.; Plyasunkova, L. A.

doi:10.1007/bf02771345

Cited by 3 publications

(2 citation statements)

References 2 publications

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“…This difference could be attributed to a modification of the interface between the crucible and the molten CrSi2. One possible explanation would be that the wettability of CrSi2 increases due to the formation of NH4BF4 at the interface by a reaction between HF and BN [56,57]. Nevertheless, this assumption needs further investigation to confirm.…”

Section: Resultsmentioning

confidence: 99%

Centimetric CrSi2 crystal grown by the vertical gradient Freeze method

Moll

Laborde

Barou

et al. 2020

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Centimetric CrSi2 crystal grown by the vertical gradient Freeze method

Moll

Laborde

Barou

et al. 2020

Journal of Crystal Growth

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“…Hexagonal boron nitride, as an important class of functional and structural materials, has been discovered to be an excellent modified dielectric material due to its extremely low dielectric constant and dielectric loss, stable chemical properties, and high melting point (∼3000 • C). [24][25][26][27] In recent years, BN has also been widely applied to modify the structure, dielectric properties, and high temperature stability of ceramic materials. [28][29][30][31][32][33] Zhou et al investigated the effect of BN interface on the wave absorption properties of SiC coated carbon fibers.…”

Section: Introductionmentioning

confidence: 99%

Effect of BN content on the structural, mechanical, and dielectric properties of PDCs‐SiCN(BN) composite ceramics

et al. 2023

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Hexagonal boron nitride (h‐BN) with low dielectric loss and high temperature resistance opens up new opportunities for the preparation of polymer‐derived SiCN ceramics (PDCs‐SiCN ceramics) with excellent mechanical and dielectric properties. BN‐containing polymer‐derived SiCN composite ceramics (PDCs‐SiCN(BN) composite ceramics) with different BN content were prepared via a pyrolysis process of ball‐milling‐blended Polyvinylsilazane/boron nitride (PVSZ/BN) precursors. BN is stably embedded in the SiCN tissue and tightly bound with it. The appropriate content of BN greatly improves the mechanical properties of PDCs‐SiCN ceramics, as BN reduces the number of pores and prevents crack expansion. Additionally, BN is also beneficial in lowering the dielectric loss of PDCs‐SiCN ceramics because of the weakened polarization relaxation behavior. PDCs‐SiCN (BN) composite ceramics have optimal mechanical and dielectric properties when the BN content is 1 wt%. The flexural strength, flexural modulus and compression strength of PDCs‐SiCN(BN) composite ceramics with 1 wt% BN doping content were 189.37 MPa, 46.38 GPa, and 399.02 MPa, respectively. Its average dielectric loss (tanδε) at 12.4‐18 GHz is 0.0049.

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