Chemical stability of vanadium boride with aluminum

Kolawa, E.; Molarius, Jyrki; Flick, W.; Nieh, C. W.; Tran, L.T.; Nicolet, M.‐A.; So, F. C. T.; Wei, Jun

doi:10.1016/0040-6090(88)90363-x

Cited by 8 publications

(2 citation statements)

References 18 publications

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“…Hafnium diboride (HfB 2 ) has an AlB 2 -type hexagonal structure, which can be used in thin film resistors [3] and explored as diffusion barriers in microelectronics [4][5][6][7]. Recently, HfB 2 plus silicon carbide offers a good combination of properties that make it a candidate for application in airframe leading edges on sharp-bodied reentry vehicles [8].…”

Section: Introductionmentioning

confidence: 98%

Synthesis and oxidation of nanocrystalline HfB2

Chen

Shi

et al. 2004

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 98%

Synthesis and oxidation of nanocrystalline HfB2

Chen

Shi

et al. 2004

Journal of Alloys and Compounds

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“…Annealing at 550°C completely consumes the barrier through reaction with migration of W or Mo to the surface. The backscattering yield ratio of the barrier metal to aluminum at the surface with respect to the silicon substrate is consistent with the phases MoAl 12 The 130 nm amorphous silicide barriers with 350 nm Al overlayers were also tested on shallow-junction diodes. Although the large-area diodes do not capture all possible barrier failure modes found in today's submicron metallizations ͑e.g., barrier cracking at the corners of vias͒, they provide a practical and very sensitive assessment of planar barriers.…”

Section: A M-si Barriersmentioning

confidence: 98%

Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

Reid

Kolawa

Garland

et al. 1996

Journal of Applied Physics

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M-Si-N and M-Si ͑MϭMo, Ta, or W͒ thin films, reactively sputtered from M 5 Si 3 and WSi 2 targets, are examined as diffusion barriers for aluminum metallizations of silicon. Methods of analysis include electrical tests of shallow-junction diodes, 4 He ϩϩ backscattering spectrometry, x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and secondary-ion-mass spectrometry. At the proper compositions, the M-Si-N films prevent Al overlayers from electrically degrading shallow-junction diodes after 10 min anneals above the melting point of aluminum. Secondary-ion-mass spectrometry indicates virtually no diffusivity of Al into the M-Si-N films during a 700°C/10 h treatment. The stability can be partially attributed to a self-sealing 3-nm-thick AlN layer that grows at the M-Si-N/Al interface, as seen by transmission electron microscopy.

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