Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis

Poche, Thomas; Wirth, William; Jang, Seonhee

doi:10.1016/j.mee.2024.112221

Microelectronic Engineering

2024

DOI: 10.1016/j.mee.2024.112221

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Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis

Thomas Poche,

William Wirth,

Seonhee Jang

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Investigating the influence of Ar or O2 carrier flow rate on electrical insulation resistance of SiO2 layer deposited by atmospheric pressure plasma jet technology

Hao,

Liu,

Guo

et al. 2025

Materials Today Communications

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Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis

Cited by 1 publication

References 62 publications

Investigating the influence of Ar or O2 carrier flow rate on electrical insulation resistance of SiO2 layer deposited by atmospheric pressure plasma jet technology

Investigating the influence of Ar or O2 carrier flow rate on electrical insulation resistance of SiO2 layer deposited by atmospheric pressure plasma jet technology

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