It could be argued that the organometallic route to quantum dots (QDs) has found the most success with chalcogen-containing semiconducting particles, as the II-VI and IV-VI families of materials are easily prepared yielding exceptionally high-quality QDs. Other families of technically important semiconductors incorporating chalcogens have also been prepared, notably I-III-VI materials, which have potential applications in solar energy, especially CuInSe 2 , which has a bandgap between 1.04 eV (ca. 1190 nm) and 1.10 eV (ca. 1125 nm), and an exciton radius of 21.2 nm. 1 The related material CuInS 2 , with a bandgap of ca. 1.53 eV (810 nm) and an excitonic diameter of 8.2 nm, 2,3 has also been prepared. Most of the synthetic pathways described are similar in their approach, apart from the preparation of I-III-VI QDs using single-source precursors, which is covered in Chapter 7.The ternary compound CuInSe 2 has been synthesised in the form of spherical QDs, ca. 4 nm in diameter, by the injection of InCl 3 and CuCl, dissolved in trioctylphosphine (TOP), in trioctylphosphine oxide (TOPO) at 100 C, followed by the injection of trioctylphosphine selenide (TOPSe) an hour later at 250 C and growth for 1 day. 4,5 The particles, isolated by the usual solvent/non-solvent interaction, exhibited a band edge at ca. 420 nm and broad emission with a maximum at 440 nm. This emission prole is in stark contrast to other reports of Cu-In-Se materials, which have optical properties predominantly in the red/infrared region, and may have some