As a promising candidate for low-cost and eco-friendly
thin-film
photovoltaics, the emerging quaternary chalcogenide based solar cells
have experienced rapid advances over the past decade. Here, we propose
quaternary semiconducting chalcogenides CuZn
2
AlSe
4
(CZASe) through cross-substitutions (cation mutations). The nonexistence
of imaginary modes in the entire Brillouin zone of CZASe represents
the inherent dynamic stability of the system. The electronic, optical,
and defect properties of stannite CZASe quaternary semiconducting
material was systematically investigated using density functional
theory calculations. We have found that the chemical-potential control
is very important for growing good-quality crystals and also to avoid
secondary-phase formations such as ZnSe, Al
2
ZnSe
4
, and Cu
3
Se
2
. The observed p-type conductivity
is mainly due to antisite defect Cu
Zn
, which has the lowest
formation energy with a relatively deeper acceptor level than that
of the Cu vacant site (V
Cu
). The electronic band structures
of vacancies and antisite defects by means of hybrid functional calculations
show energy band shifting and energy band narrowing or broadening,
which eventually tunes the optical band gap and improves the solar
energy-conversion performance of semiconducting CZASe. Our results
suggest that the stannite CZASe quaternary chalcogenides could be
promising candidates for the efficient earth-abundant thin-film solar
cells.