Chemical Vapor Deposited Zinc Sulfide

McCloy, John S.; Tustison, Randal W.

doi:10.1117/3.1001953

Cited by 27 publications

(29 citation statements)

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“…3 and supplementary material Fig. 15 The C1s and O1s binding energies of the bare -COOH and -OH SAMs are consistent with previous reported XPS spectra. 52 The Zn 2p 3/2 binding energy (161.2-161.8 eV) is consistent with the formation of sulfide rather than oxidized sulfur species, such as SO 4 (168.8-169.8 eV) (Tables I and II).…”

Section: B Xpssupporting

confidence: 90%

“…Unlike electrodeposition, 8,9 successive ionic layer adsorption and reaction, 10,11 and chemical bath deposition, 12,13 ALD is a gas phase process and so does not require a solvent, which can lead to swelling and/or degradation of the organic film. 14 ALD can also proceed at low temperatures ( 50 C) unlike other gas phase deposition methods, e.g., chemical vapor deposition (CVD), 15 and so is compatible with organic thin films. Finally, the thickness of the film can be precisely controlled, which is difficult in CVD and physical deposition processes.…”

Section: Introductionmentioning

confidence: 99%

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Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

Shi

Walker

2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique J. Vac. Sci. Technol. A 33, 01A114 (2015); 10.1116/1.4900719 Atomic layer deposition of ZnO on Cu-nanoclusters for methanol synthesis J. Vac. Sci. Technol. A 31, 01A144 (2013); 10.1116/1.4772460Influence of organozinc ligand design on growth and material properties of ZnS and ZnO deposited by atomic layer depositionThe room temperature atomic layerlike deposition (ALLD) of ZnS on functionalized self-assembled monolayers (SAMs) was investigated, using diethyl zinc (DEZ) and in situ generated H 2 S as reactants. Depositions on SAMs with three different terminal groups, -CH 3, -OH, and -COOH, were studied. It was found that the reaction of DEZ with the SAM terminal group is critical in determining the film growth rate. Little or no deposition is observed on -CH 3 terminated SAMs because DEZ does not react with the methyl terminal group. ZnS does deposit on both -OH and -COOH terminated SAMs, but the grow rate on -COOH terminated SAMs is $10% lower per cycle than on -OH terminated SAMs. DEZ reacts with the hydroxyl group on -OH terminated SAMs, while on -COOH terminated SAMs it reacts with both the hydroxyl and carbonyl bonds of the terminal groups. The carbonyl reaction is found to lead to the formation of ketones rather than deposition of ZnS, lowering the growth rate on -COOH terminated SAMs. SIMS spectra show that both -OH and -COOH terminated SAMs are covered by the deposited ZnS layer after five ALLD cycles. In contrast to ZnO ALLD where the composition of the film differs for the first few layers on -COOH and -OH terminated SAMs, the deposited film composition is the same for both -COOH and -OH terminated SAMs. The deposited film is found to be Zn-rich, suggesting that the reaction of H 2 S with the Zn-surface adduct may be incomplete.

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Section: B Xpssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

Shi

Walker

2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Previously observed differences in UV-excited photoluminescence in these samples [5] indicate the presence of electronic defect populations that vary with sample orientation and growth position, but these luminescence differences brought about by above-bandgap excitation apparently do not result in index differences of practical importance at visible and infrared wavelengths. Likewise, observed crystallographic hexagonality differences in these samples as determined by x-ray diffraction [4] did not result in measurable index differences.…”

mentioning

confidence: 75%

“…The anisotropy of CVD ZnS has previously been analyzed using various methods to study prominent structural elements at each microscopic scale [3][4][5]. Differences were found in spectral absorption, bidirectional transmittance distribution function, photoluminescence, and crystallographic phase and texture.…”

mentioning

confidence: 99%

“…Likewise, observed crystallographic hexagonality differences in these samples as determined by x-ray diffraction [4] did not result in measurable index differences. It has been observed that similar oriented samples examined using powder x-ray diffraction do not show the crystallographic differences that are present when examining intact polycrystalline samples [4,5]. This implies that the impact of differences in texture of hexagonality on average refractive index over the prism coupler laser spot sizes (∼1 mm) is negligible.…”

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confidence: 99%

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Rapid assessment of mid-infrared refractive index anisotropy using a prism coupler: chemical vapor deposited ZnS

et al. 2012

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A state-of-the-art mid-infrared prism coupler was used to study suspected anisotropy in the refractive index of forward-looking-infrared grade chemical vapor deposited (CVD) zinc sulfide. Samples were prepared with columnar grain structure in and perpendicular to the sample plane, as well as from different depths in the CVD growth body. This study was motivated by the growing industry concern among optical design engineers, as well as developers of mid-infrared systems, over the reliability of historically accepted index data. Prior photoluminescence and x-ray diffraction measurements have suggested that refractive index may vary according to sample orientation with respect to the grain structure. Measurements were conducted to provide optical dispersion and thermal index (dn/dT) data at discrete laser wavelengths between 0.633 and 10.591 μm at two temperature set points (30 °C and 90 °C). Refractive index measurements between samples exhibited an average standard deviation comparable to the uncertainty of the prism coupler measurement (0.0004 refractive index units), suggesting that the variation in refractive index as a function of sample orientation and CVD deposition time is negligible and should have no impact on subsequent optical designs. Measured dispersion data at mid-infrared wavelengths were also found to agree well with prior published measurements.

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Electric Field/Current-Assisted Sintering of Optical Ceramics

Yoshida¹

2020

Handbook of Advanced Ceramics and Composites

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Chemical Vapor Deposited Zinc Sulfide

Cited by 27 publications

References 0 publications

Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

Rapid assessment of mid-infrared refractive index anisotropy using a prism coupler: chemical vapor deposited ZnS

Electric Field/Current-Assisted Sintering of Optical Ceramics

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