Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds

Balog, Mária; Schieber, M.; Michman, M.; Patai, Saul

doi:10.1016/0040-6090(77)90312-1

Cited by 340 publications

(163 citation statements)

References 14 publications

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“…The dynamic dielectric constant estimated from the slope of the Schottky plot ͓inset in Fig. 3͑a͔͒ is quite close to the reported value of 3.69 for HfO 2 , 13 which is the square of the measured refractive index ͑n = r 1/2 = 1.92͒. The barrier height ͑ B ͒ is calculated to be ϳ1.5 eV from the intercept of the curve ͑inset in Fig.…”

supporting

confidence: 84%

Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack

Mahapatra

Chakraborty

Horsfall

et al. 2008

Applied Physics Letters

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. (2008) 'Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack.', Applied physics letters., 92 (4). 042904.Further information on publisher's website: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

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supporting

confidence: 84%

Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack

Mahapatra

Chakraborty

Horsfall

et al. 2008

Applied Physics Letters

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“…The literature consensus is that HfO 2 films have a gap of 5.6-6.0 eV, although the proof and methodology of this remains debated. [16][17][18][19][20] We obtain this value from our results by defining the edge as the 2 level of the Gaussian-modeled band tail states. Although there is no strong theoretical argument to include what we are calling band edge defect states in defining the "real" gap, they may be considered as contributing to an "effective" band gap (see Fig.…”

Section: F Comparison Of Theory and Experiment: Band Tail Statesmentioning

confidence: 99%

Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

Sayan

Emge

Garfunkel

et al. 2004

Journal of Applied Physics

103

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The valence and conduction band densities of states for the HfO 2 / SiO 2 / Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.

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“…21,22 After PDA in oxygen ͑T Ͼ 770 K͒, hafnia films on Si adopt the monoclinic structure. [23][24][25] This is in contrast with zirconia which may crystallize into either a monoclinic or a tetragonal structure depending on the film thickness and stoichiometry. 21 In this paper we leave the problem of polymorphism aside and focus on monoclinic hafnia.…”

Section: Introductionmentioning

confidence: 95%

The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

Gavartin

Foster

Bersuker

et al. 2005

Journal of Applied Physics

156

111

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Using ab initio density functional total energy and molecular dynamics simulations, we study the effects of various forms of nitrogen post deposition anneal (PDA) on the electric properties of hafnia in the context of its application as a gate dielectric in field effect transistors (FET). We consider the atomic structure and energetics of nitrogen containing defects which can be formed during the PDA in various N-based ambients: N2, N + 2 , N, NH3, NO, N2O. We analyse the role of such defects in fixed charge accumulation, electron trapping and in the growth of the interface SiO2 layer. We find that nitrogen anneal of the oxides leads to an effective immobilization of native defects such as oxygen vacancies and interstitial oxygen ions, which may inhibit growth of silica layer. Nitrogen in any form effectively incorporates into the pre-existing oxygen vacancies and, therefore may decrease the concentration of shallow electron traps. However, nitrogen in any form is unlikely to significantly reduce the fixed charge in the dielectric.

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Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds

Cited by 340 publications

References 14 publications

Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack

Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack

Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

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