Chemical vapor deposition-assembled graphene field-effect transistor on hexagonal boron nitride

Kim, Edwin; Yu, Tianhua; Song, Eui Sang; Yu, Bin

doi:10.1063/1.3604012

Cited by 60 publications

(52 citation statements)

References 26 publications

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“…In Teng's work, they reported the mobility (μ) of the graphene film was 600 cm 2 V À 1 s À 1 [15]. Well, Edwin Kim prepared graphene films on Cu foils, and the mobility (μ) was 1200 cm 2 V À 1 s À 1 [16]. However, the experimental study on the carrier transport properties of bilayer graphene was rarely reported so far.…”

Section: Introductionmentioning

confidence: 99%

Study on temperature-dependent carrier transport for bilayer graphene

Liu

et al. 2015

Physica E: Low-dimensional Systems and Nanostructures

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Section: Introductionmentioning

confidence: 99%

Study on temperature-dependent carrier transport for bilayer graphene

Liu

et al. 2015

Physica E: Low-dimensional Systems and Nanostructures

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“…In particular, we identify conditions at which the first moiré miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfaces coming from other minibands. In such cases the Hall coefficient exhibits two distinct alternations of its sign as a function of charge carrier density.PACS numbers: 73.22.Pr,73.21.Cd, Recently, it has been demonstrated that the electronic quality of graphene-based devices can be dramatically improved by placing graphene on an atomically flat crystal surface, such as hexagonal boron nitride (hBN) [1][2][3][4][5][6][7]. At the same time, graphene's electronic spectrum also becomes modified, acquiring a complex, energydependent form caused by incommensurability between the graphene and substrate crystal lattices [8][9][10].…”

mentioning

confidence: 99%

Generic miniband structure of graphene on a hexagonal substrate

et al. 2013

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Using a general symmetry-based approach, we provide a classification of generic miniband structures for electrons in graphene placed on substrates with the hexagonal Bravais symmetry. In particular, we identify conditions at which the first moiré miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfaces coming from other minibands. In such cases the Hall coefficient exhibits two distinct alternations of its sign as a function of charge carrier density.PACS numbers: 73.22.Pr,73.21.Cd, Recently, it has been demonstrated that the electronic quality of graphene-based devices can be dramatically improved by placing graphene on an atomically flat crystal surface, such as hexagonal boron nitride (hBN) [1][2][3][4][5][6][7]. At the same time, graphene's electronic spectrum also becomes modified, acquiring a complex, energydependent form caused by incommensurability between the graphene and substrate crystal lattices [8][9][10]. In particular, for graphene placed on hBN, the difference between their lattice constants and crystallographic misalignment generate a hexagonal periodic structure known as a moiré pattern [2,3,[8][9][10]. The resulting periodic perturbation, usually referred to as a superlattice, acts on graphene's charge carriers and leads to multiple minibands and the generation of secondary Dirac-like spectra. The resulting new Dirac fermions present yet another case where graphene allows mimicking of QED phenomena under conditions that cannot be achieved in particle physics experiments. In contrast to relativistic particles in free space, the properties of secondary Dirac fermions in graphene can be affected by a periodic sublattice symmetry breaking and modulation of carbon-carbon hopping amplitudes, in addition to a simple potential modulation. The combination of different features in the modulation results in a multiplicity of possible outcomes for the moiré miniband spectrum in graphene which we systematically investigate in this article.To describe the effect of a substrate on electrons in graphene at a distance, d, much larger than the spacing, a, between carbon atoms in graphene's honeycomb lattice, we use the earlier observation [8][9][10][11][12][13][14] that, at d a the lateral variation of the wavefunctions of the p z carbon orbitals is smooth on the scale of a. This is manifested in the comparable sizes of the skew and vertical hopping in graphite and permits an elegant continuummodel description [11][12][13][14] of the interlayer coupling in twisted bilayers and the resulting band structure. A similar idea applied to graphene on a hBN substrate [8][9][10] suggests that a substrate perturbation for Dirac electrons in graphene can be described in terms of simple harmonic functions corresponding to the six smallest reciprocal lattice vectors of the moiré superlattice.Below, we shall use a similar approach to analyse the generic properties of moiré minibands for electrons in graphene subjected to a subs...

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“…It was surprising that small-signal transconductance and effective carrier mobility were improved by 8.5x and 4x, respectively, on h-BN/SiO 2 as compared with that on SiO 2 /Si. [ 148 ] Novoselov et al indicated that the atomically thin h-BN layer could act as a non-defective dielectric layer with a high puncture fi eld, which has potential for applications in tunnel devices and FETs with a high carrier density in the conducting channel. [ 149 ] According to the theoretical study of Schwingenschlögl et al, the strong interaction between boron atoms and carbon atoms led to the strong interaction between single-layer graphene and h-BN, which resulted in the inequivalence of the two carbon atoms of the graphene unit cell.…”

Section: Reviewmentioning

confidence: 99%

Controllable Fabrication of Nanostructured Graphene Towards Electronics

Zeng

Xiao

Liu

et al. 2016

Adv Elect Materials

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applications, especially for fi eld-effect transistors (FETs) and sensors. [3][4][5][6] However, Klein tunneling in graphene and the related electron confi nement represent a real barrier to the development of graphene-based transistors, which results in a lack of band gap and the inability to confi ne electrons. [ 7 ] Therefore, although high mobility and high current are essential for high-frequency applications, this intrinsically high off-state current and low on/off ratio hinder the potential applications of graphene in FETs operated at room temperature.Numerous efforts have been devoted to inducing a band gap in graphene by chemical modifi cation, [8][9][10] the application of a perpendicular electric fi eld to bilayer graphene, [11][12][13] and other methods. [ 14 ] Nevertheless, these methods are uncontrollable and the as-constructed devices usually exhibit poor electronic performance. The fabrication of nanostructured graphene can be a quite effective way to introduce a bandgap. [ 15 ] Generally, nanostructured graphene refers to a graphene structure of intermediate size between microscopic and molecular, in which one dimension must be at the nanoscale, including graphene nanoribbons (GNRs), graphene nanomeshes, graphene nanodisks, graphene quantum dots, graphene nanoheterostructures, and so on. Among those graphene nanostructures, GNRs are the most popular and potentially useful ones for electronic applications; therefore, we will mainly concentrate on the progress made in GNRs. The narrowing of graphene fi lm into stripes with widths <10 nm was studied both theoretically and experimentally to create an energy band in the electronic structure of graphene due to quantum confi nement, which is the most effective way to open the band gap of graphene. In fact, the band gap is determined by the states of the edge and the width of the nanoribbon. [ 15 ] Tight binding (TB) calculations predict that GNRs terminated with 'armchair' edges can be either metallic or semi-conducting depending on their widths. Nanoribbons terminated with 'zigzag' edges are always metallic regardless of their widths. In order for the GNRs to open band gaps of a similar order as commonly used semiconducting materials (e.g. Si (1.14 eV), GaAs (1.43 eV)) widths of less than 2 nm are likely to be necessary. [ 16 ] Therefore, as the fi rst step to implement the electronic applications, nanostructured graphene must be directly synthesized Due to graphene's exceptional electronic properties, strong efforts are being made to push forward its nanoelectronic applications. However, the gapless band structure of truly 2D graphene makes it unsuitable for direct use in graphene-based fi eld-effect transistors (FETs), which is one of the most widely discussed graphene applications in electronics. Therefore, in order to accomplish graphene's applications in semiconducting nanoelectronics, it is necessary to produce nanostructured graphene with suffi ciently narrow characteristic width, thus introducing further confi nement and opening a reasonably la...

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Chemical vapor deposition-assembled graphene field-effect transistor on hexagonal boron nitride

Cited by 60 publications

References 26 publications

Study on temperature-dependent carrier transport for bilayer graphene

Study on temperature-dependent carrier transport for bilayer graphene

Generic miniband structure of graphene on a hexagonal substrate

Controllable Fabrication of Nanostructured Graphene Towards Electronics

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