Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

Liu, Qingbin; Chen, Yu; He, Zezhao; Gu, Guodong; Wang, Jingjing; Zhou, Chuangjie; Guo, Jenhwa; Gao, Xiao; Feng, Zhihong

doi:10.1016/j.apsusc.2018.05.131

Cited by 14 publications

(8 citation statements)

References 41 publications

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“…Our results are in good agreement with the experimental observation that graphene develops better with increasing temperature. 73,74 However, as pointed out in the experiment, 75,76 too high temperature might make the substrate unstable, resulting in the uniformity of graphene being not satisfactory and difficult to control its growth.…”

Section: Thermal Decomposition Simulationmentioning

confidence: 98%

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Zhang

Duin

2020

Chem. Mater.

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Molecular dynamics (MD) studies of graphene growth at the atomistic level can provide valuable insight for understanding its growth mechanism, which is helpful to optimize the growth conditions for synthesizing high-quality, large-scale graphene. In this work, we performed nanosecond timescale MD simulations to explore the graphene growth on a silicon carbide (SiC) substrate with the use of a newly developed ReaxFF reactive force field. On the basis of simulation results at various temperatures from 1000 to 3000 K, we identify the optimal temperature at which the high-quality graphene might be produced. Based on this, we further studied the graphene growth with the silicon thermal decomposition method, and we propose different growth mechanisms on the C-terminated (001̅ ) and Siterminated (001) SiC surfaces. We also simulated graphene growth on the Si-facet of SiC substrate using the chemical vapor deposition (CVD) method through sequential C 2 H 2 addition, in which the surface catalytic dehydrogenation reactions are included. Furthermore, the temperature effect on catalytic efficiency is discussed. The defect and grain boundary structures of the grown graphene with these two growing strategies are investigated as well. We also provide detailed guidelines on how our atomistic-scale results can assist experimental efforts to synthesize layer-tunable graphene with different growth methods.

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Section: Thermal Decomposition Simulationmentioning

confidence: 98%

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Zhang

Duin

2020

Chem. Mater.

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“…Chemical vapor deposition (CVD) of graphene directly on insulating substrates such as silicon carbide (SiC) [1][2][3][4] avoids the transfer process required for metal catalyzed graphene growth [5,6], which tends to hamper the electrical properties due to transfer related contaminations and defects [7][8][9][10]. Nondestructive measurements of the electrical properties of graphene on SiC is a requirement for applications in electronics and integrated circuits [11][12][13][14].…”

Section: Accepted Manuscript Introductionmentioning

confidence: 99%

Non-contact mobility measurements of graphene on silicon carbide

Whelan

Zhao

Pasternak

et al. 2019

Microelectronic Engineering

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“…Since then, many modern methods such as mechanical cleaving, chemical exfoliation, chemical synthesis, and thermal chemical vapor deposition (CVD) have been widely reported for the synthesis of graphene. 7,8 Among these, CVD is the conventional method for largescale synthesis of high-quality graphene. 9 The major challenge of using a pure CVD process for graphene synthesis is that it requires very high temperature (>1000 °C) to catalyze the reaction and a significantly long synthesis duration.…”

Section: Introductionmentioning

confidence: 99%

Remote plasma-assisted low-temperature large-area graphene synthesis

Pae

Medwal

Vas

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

Cited by 14 publications

References 41 publications

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Non-contact mobility measurements of graphene on silicon carbide

Remote plasma-assisted low-temperature large-area graphene synthesis

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Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

Cited by 14 publications

References 41 publications

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Non-contact mobility measurements of graphene on silicon carbide

Remote plasma-assisted low-temperature large-area graphene synthesis

Contact Info

Product

Resources

About

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate