Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking

Ji, Yanxin; Calderon, Brian; Han, Yimo; Cueva, Paul; Jungwirth, Nicholas R.; Alsalman, Hussain; Hwang, Jeonghyun; Fuchs, Gregory D.; Muller, David A.; Spencer, Michael G.

doi:10.1021/acsnano.7b04841

Cited by 102 publications

(114 citation statements)

References 34 publications

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“…At the elevated temperatures, often used in CVD growth of hBN, diffusion of B and N species through the metallic catalyst play a critical role for layer‐controlled growth and fabrication of high‐quality hBN . Due to the difference in solubility of B and N constituents in Cu, where B is readily incorporated into the bulk lattice while N experiences negligible incorporation, the interaction between the catalyst surface/bulk will dictate the supply of the precursor molecules and thus control the growth process .…”

Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Inmentioning

confidence: 99%

Selective Defect Formation in Hexagonal Boron Nitride

Abidi

Mendelson

Tran

et al. 2019

Advanced Optical Materials

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Robust and photostable single photon emitters (SPEs) underpin a number of promising quantum information science and technologies. [1][2][3][4] Solid-state quantum light sources are highly sought after for their ease of integration into onchip architectures, and rapid progress has been made recently with a variety of solidstate sources such as quantum dots, [5,6] color centers in diamond, [7,8] silicon carbide, [9,10] rare-earth materials, [11] carbon nanotubes, [12] and layered van der Waals materials. [3] One of the most promising candidates are quantum emitters in hexagonal boron nitride (hBN), which have recently emerged as a robust solid-state platform capable of hosting bright, [13][14][15][16][17] linearly polarized, [13,18] and optically stable SPEs operating at room temperature with high photon purity. [19,20] While the zerophonon lines (ZPLs) of hBN quantum emitters have been known to display a wide spread of energies (≈1.6-2.4 eV), implying the existence of multiple defect species, [15,18,[21][22][23] recent progress utilizing chemical vapor deposition (CVD) has shown that this spread can be reduced to ≈100 meV. [24,25] This reduced ZPL energy distribution is useful both for applications and for basic studies of the defects responsible for the emissions. However, to fully understand and exploit the diversity of emissions reported in hBN further advances in controlling the observed emission spectra and emitter density are required.In order to target the incorporation of particular structural defects during CVD growth, a method to modify the dominant defect formation processes is required. In situ monitoring of hBN growth on Cu has clarified that hBN growth is subject to complex interaction between the precursor species, and the catalyst surface/bulk. [26] As a result, controlling the interactions between the precursor species and the catalyst is critical to achieve highly crystalline hBN growth, but also offers a promising avenue to controlled defect engineering during CVD growth of hBN. In other material systems such as InAs/ GaAs quantum dots modifying catalyst properties such as lattice mismatch during epitaxial growth has been definitively linked to defect creation. [27] Similarly graphene is known to be dependent of the interactions with the catalyst bulk/surface, where growth depends strongly on the relative phase of the catalyst and the supply of carbon in and out of the catalyst, controlling both defect formation and density. [28,29] Despite added complications for CVD growth of hBN, especially due to Luminescent defects in hexagonal boron nitride (hBN) have emerged as promising single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone toward their integration into on-chip photonic architectures. Here, an effective approach is reported to fabricate hBN SPEs with desired emission properties in distinct spectral regions via the manipulation of boron diffusion through ...

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Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Inmentioning

confidence: 99%

Selective Defect Formation in Hexagonal Boron Nitride

Abidi

Mendelson

Tran

et al. 2019

Advanced Optical Materials

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“…Figure a shows a schematic of typical cases in which several possible sites can be used as 1D or 2D epitaxial templates, including 2D surface, 1D GB lines in 2D surface, 1D heterointerface, and 1D edges of 2D domains, which are referred to as the templates of various dimensionalities. First, Figure b shows several triangular h‐BN domains grown on the existing single crystal h‐BN template surface with the dominated same orientation, which indicates an epitaxial growth of h‐BN, analog to aligned h‐BN growth on Cu surface with different crystallographic orientations . Second, Figure c shows that two h‐BN domains linked by a straight GB and single mono‐ or multilayered h‐BN domains are grown with the same orientation to the underlying mother h‐BN domain.…”

mentioning

confidence: 91%

Epitaxial Growth of h‐BN on Templates of Various Dimensionalities in h‐BN–Graphene Material Systems

Chen

et al. 2019

Advanced Materials

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2D in-plane and vertical heterostructures such as graphene and hexagonal boron nitride (h-BN) have drawn wide attention owing to their unique structure and properties over the past years. [1][2][3][4][5][6] Previous studies have explored their controlled growth, detailed interface microstructure, properties, and device applications. [7] For example, the interface of in-plane or vertical heterostructures can be controlled to be atomically sharp or clean at a proper growth condition, and the intriguing properties such as half-metallicity, [8] magnetism, [9] or peculiar boundary states [3,10] have been theoretically predicted or partly confirmed by experiments. On the other hand, the in-plane heterostructure system is also an ideal system for deeply studying related epitaxy behavior and kinetic process beyond conventional A-A or A-B material systems. For example, grapheneh-BN system provides a rich possibility of epitaxial templates with various dimensionalities and interface, such as 2D crystal surfaces, 1D edges, inner 1D grain boundaries (GBs), and 1D interface of graphene-h-BN. Among these possibilities, 1D graphene zigzag (ZZ) edges were previously studied in depth for the epitaxial growth of h-BN. [11,12] While h-BN growth along other various graphene edges fabricated by top-down etching was also demonstrated, graphene edge configurations are essentially unknown. [13,14] However, much less is known about the related kinetic growth of complex epitaxial systems. To date, it is not clear whether the growth of 2D materials on templates of various dimensionalities is allowed in practice, and no effective idea or model is available for describing the complex epitaxial growth kinetics.Here, using a 2D A-B (A: graphene and B: h-BN) system with the freedom of in-and out-of-plane epitaxial growth, we discover a set of new epitaxial growth patterns, spanning from edge-configuration-dependent growth along 1D graphene ZZ to armchair (AC) edges, GB formation by merging materials, 1D GB-or A-B interface-templated growth of adlayer, to adlayer growth on 2D surface template. We further provide, for the first time, a framework that allows the description of various kinetic growths of epitaxial structures by combined geometric and structural modeling. This work provides a general viewpoint for understanding epitaxial growth in complex systems.We started the growth of single crystal hexagonal graphene flakes (HGFs) with desired sizes and densities on liquid Cu surface by modulating experimental parameters such as methane, H 2 , and Ar flow rates. [15] The formed regular monolayer HGFs Epitaxy traditionally refers to the growth of a crystalline adlayer on a crystalline surface, and has been demonstrated in several simple material systems over decades. Beyond this, it is not clear whether the growth of 2D materials on templates of various dimensionalities is possible, and no effective theory or model is available for describing the complex epitaxial growth kinetics. Here a library of hexagonal boron nitride epitaxy is presented on ...

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“…Although Cu‐Ni alloys can decrease the nucleation density of h‐BN, the corresponding maximum grain size is still limited to ≈100 µm . As far as we know, the maximum h‐BN domain sizes are in several hundreds of micrometers and can be achieved on Si‐doped Fe substrates, Ni (111) films or in Cu enclosures …”

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confidence: 99%

Hexagonal Boron Nitride Growth on Cu‐Si Alloy: Morphologies and Large Domains

et al. 2019

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Controllable synthesis of high‐quality hexagonal boron nitride (h‐BN) is desired toward the industrial application of 2D devices based on van der Waals heterostructures. Substantial efforts are devoted to synthesize h‐BN on copper through chemical vapor deposition, which has been successfully applied to grow graphene. However, the progress in synthesizing h‐BN has been significantly retarded, and it is still challenging to realize millimeter‐scale domains and control their morphologies reliably. Here, the nucleation density of h‐BN on Cu is successfully reduced by over two orders of magnitude by simply introducing a small amount of silicon, giving rise to large triangular domains with maximum 0.25 mm lateral size. Moreover, the domain morphologies can be modified from needles, tree patterns, and leaf darts to triangles through controlling the growth temperature. The presence of silicon alters the growth mechanism from attachment‐limited mode to diffusion‐limited mode, leading to dendrite domains that are rarely observed on pure Cu. A phase‐field model is utilized to reveal the growing dynamics regarding B‐N diffusion, desorption, flux, and reactivity variables, and explain the morphology evolution. The work sheds lights on the h‐BN growth toward large single crystals and morphology probabilities.

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Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking

Cited by 102 publications

References 34 publications

Selective Defect Formation in Hexagonal Boron Nitride

Selective Defect Formation in Hexagonal Boron Nitride

Epitaxial Growth of h‐BN on Templates of Various Dimensionalities in h‐BN–Graphene Material Systems

Hexagonal Boron Nitride Growth on Cu‐Si Alloy: Morphologies and Large Domains

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