Chemical Vapor Deposition in a Partitioned Box Reactor

Abstract

The partitioned box reactor, a novel high throughput CVD reactor, is presented. The reactor has good chemical and energy efficiency, and the large surface/volume ratio results in suppression of homogeneous nucleation. The scaling behavior of gas flow and the various deposition regions (surface rate limited, diffusion limited, and depletion limited) are discussed. Experimentally obtained maps of static and integrated deposition profiles are given for carbon and silicon films.