Chemical vapor deposition of an electroplating Cu seed layer using hexafluoroacetylacetonate Cu(1,5-dimethylcyclooctadiene)

Wh, Lee; Ko, YK; Byun, IJ; Seo, BS; Jg, Lee; Reucroft, PJ; Lee, Ju; Lee, Jun Young

doi:10.1116/1.1405511

Cited by 17 publications

(14 citation statements)

References 23 publications

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“…In SCFD, the use of scCO 2 as a solvent overcomes several limitations in vacuum-based processes. For example, solubility of precursors due to the liquid-like property of scCO 2 increases the variety of applicable precursors [11], while there are only few precursors for Cu-CVD due to low volatility of Cu compounds [12][13][14][15][16][17][18][19][20][21][22]. The use of scCO 2 also has numerous advantages inherent in the physical properties of scCO 2 intermediate between liquid and gas.…”

Section: Introductionmentioning

confidence: 99%

Effect of liquid additives in supercritical fluid deposition of copper for enhancing deposition chemistry

Momose¹,

Ohkubo²,

Sugiyama³

et al. 2008

Thin Solid Films

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Section: Introductionmentioning

confidence: 99%

Effect of liquid additives in supercritical fluid deposition of copper for enhancing deposition chemistry

Momose¹,

Ohkubo²,

Sugiyama³

et al. 2008

Thin Solid Films

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“…[1][2][3][4][5][6][7] Cu electroplating is the most common technology employed for void-free filling of via and hole structures with high growth rates in the damascene structure. 11 Furthermore, nano-scale thickness control is needed for the design of the interface properties between the Cu seed layer and the barrier, which significantly affects reliability and adhesion property. The conventional physical vapor deposition encounters several problems, such as poor conformal coverage, especially on the sidewalls and the overhang at the opening of vias.…”

Section: Introductionmentioning

confidence: 99%

Pulsed MOCVD of Cu Seed Layer using a (Hfac)Cu(3,3-Dimethyl-1-Butene) Source Plus H₂ Reactant

2004

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Pulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and H 2 reactant at the deposition temperatures of 50 -100 o C. The Cu thickness increased proportionally to the number of cycle, and the growth rate was in the range of 3.5 to 8.2 Å /cycle, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for more than 100nm. In addition, about a 90% step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. H 2 , introduced as a reactant gas, can play an active role in achieving highly conformal coatings, with increased grain sizes.

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“…2,3,10 Therefore, most current research focuses on developing an alternate deposition technique for the seed layer, which must be continuous, smooth, conformal, and thin enough for a critical dimension of 100 nm and below. 11 In addition, nano-scale thickness control is required for the design of the interface properties between the Cu seed layer and the barrier, which significantly affects the reliability. 12 A copper atomic layer deposition ͑ALD͒ process using an organometallic Cu͑II͒ source and H 2 reducing agents shows various degrees of success in producing highly conformal layers of Cu thin films, with atomic layer thickness control, due to its selflimiting character.…”

mentioning

confidence: 99%

Effect of H[sub 2] Pulse on Pulsed MOCVD of Cu Seed Layers

Park

Yang

Lee

et al. 2004

Electrochem. Solid-State Lett.

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Pulsed metallorganic chemical vapor deposition ͑MOCVD͒ of conformal copper seed layers, for the electrodeposition Cu films, has been conducted by an alternating supply of a ͑hexafluoroacetylacetonate͒Cu ͑I) ͑3,3-dimetyl-1-butene͓͒͑hfac͒Cu͑DMB͔͒ source and H 2 reactant at low deposition temperatures between 50 and 100°C. The growth rate increased proportionally to the number of cycle, ranging from 3.5 to 5.4 Å/cycle, indicating the ability to control the nano-scale thickness. As-deposited films show very smooth surfaces and the low resistivities of 3.3 ⍀ cm for 30 nm thick films. About a 90% step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. H 2 , introduced as a reactant gas, can play an active role in achieving highly conformal coatings, with negligible impurities and excellent adhesion of Cu films to the TiN substrate.The downscaling of the dimensions of microelectronic devices, to below 100 nm has led to the replacement of aluminum-based metallization with copper, as Cu exhibits lower resistivity, superior electromigration resistance, and higher resistance to stress-induced voids. 1-7 This also necessitates the consideration of devices fabricated by conformal filling of Cu, over high aspect ratio contacts and vias in the damascene structure. Cu electroplating is the most common technology employed for void-free filling of via and hole structures at a near bulk resistivity, with high growth rates in scaled deep submicrometer metallization schemes. 8,9 However, this method requires the conformal deposition of a thin Cu seed layer prior to the electroplating of a thicker Cu layer. In considering methods for the deposition of a Cu seed layer, conventional physical vapor deposition encounters several problems, such as poor conformal coverage, especially on the sidewalls, and the overhang at the opening of vias. 2,3,10 Therefore, most current research focuses on developing an alternate deposition technique for the seed layer, which must be continuous, smooth, conformal, and thin enough for a critical dimension of 100 nm and below. 11 In addition, nano-scale thickness control is required for the design of the interface properties between the Cu seed layer and the barrier, which significantly affects the reliability. 12 A copper atomic layer deposition ͑ALD͒ process using an organometallic Cu͑II͒ source and H 2 reducing agents shows various degrees of success in producing highly conformal layers of Cu thin films, with atomic layer thickness control, due to its selflimiting character. 13-18 Compared with ALD Cu using Cu͑II͒, pulsed metallorganic chemical vapor deposition ͑MOCVD͒ by a Cu͑I͒ source provides a wide range of growth rate, depending on the deposition temperature, and the amount of Cu precursor introduced into the chamber. 19 In addition, the use of additional reactants pulsing can affect the nano-scale deposition characteristics, and thus provides an ability to control the microstructure, film quality and conformal coating.In this study, the pulsed MOCVD of a Cu seed layer, u...

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Chemical vapor deposition of an electroplating Cu seed layer using hexafluoroacetylacetonate Cu(1,5-dimethylcyclooctadiene)

Cited by 17 publications

References 23 publications

Effect of liquid additives in supercritical fluid deposition of copper for enhancing deposition chemistry

Effect of liquid additives in supercritical fluid deposition of copper for enhancing deposition chemistry

Pulsed MOCVD of Cu Seed Layer using a (Hfac)Cu(3,3-Dimethyl-1-Butene) Source Plus H₂ Reactant

Effect of H[sub 2] Pulse on Pulsed MOCVD of Cu Seed Layers

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Chemical vapor deposition of an electroplating Cu seed layer using hexafluoroacetylacetonate Cu(1,5-dimethylcyclooctadiene)

Cited by 17 publications

References 23 publications

Effect of liquid additives in supercritical fluid deposition of copper for enhancing deposition chemistry

Effect of liquid additives in supercritical fluid deposition of copper for enhancing deposition chemistry

Pulsed MOCVD of Cu Seed Layer using a (Hfac)Cu(3,3-Dimethyl-1-Butene) Source Plus H2 Reactant

Effect of H[sub 2] Pulse on Pulsed MOCVD of Cu Seed Layers

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Pulsed MOCVD of Cu Seed Layer using a (Hfac)Cu(3,3-Dimethyl-1-Butene) Source Plus H₂ Reactant