Emergent Process Methods for High-Technology Ceramics 1984
DOI: 10.1007/978-1-4684-8205-8_23
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Chemical Vapor Deposition of Ceramic Materials

Abstract: The chemical vapor deposition (CVD)

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Cited by 9 publications
(6 citation statements)
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“…A vast number of chemical compounds are considered for these applications (Blocher et al (1984); Campbell et al (1949); Stinton et al (1988)). Important materials being prepared by CVD for electronic and optic devices include Si, Ge, Si 3 N 4 , SiO 2 , GaAs, CdS, ZnSe, and related compounds (Spear (1982); Green and Levy (1985); Gentilman et al (1981); Hess et al (1985)).…”
Section: Application and Modelingmentioning
confidence: 99%
See 1 more Smart Citation
“…A vast number of chemical compounds are considered for these applications (Blocher et al (1984); Campbell et al (1949); Stinton et al (1988)). Important materials being prepared by CVD for electronic and optic devices include Si, Ge, Si 3 N 4 , SiO 2 , GaAs, CdS, ZnSe, and related compounds (Spear (1982); Green and Levy (1985); Gentilman et al (1981); Hess et al (1985)).…”
Section: Application and Modelingmentioning
confidence: 99%
“…rf induction coils and quartz radiant heaters are often used in horizontal, barrel, and pancake reactors (e.g., Hess et al (1985)). Less traditional methods include heating by microwave, laser, and plasma techniques (Blocher et al (1984); Randich and Gerlach (1983); Allen (1981); Stinton et al (1988); Hess et al (1985)). Although coldwall reactors minimize deposition on the walls, the large temperature gradients induce secondary flow phenomena with associated difficulties in obtaining uniform thickness and composition.…”
Section: Cvd and Chemical Equilibriummentioning
confidence: 99%
“…Indeed, MOCVD using bis(arene)chrornium compounds leads usualIy to the growth of a mixture of chromium carbides more or less contaminated by free carbon 1221 and it was claimed that addition of HI [43] or C4CI6 [44] in the gas phase suppresses the codeposition of carbon leading to pure Cr metal. With the same objective, we have deposited recently, pure Cr metal films by pyrolysis of bis(benzene)chromium under atmospheric pressure and using a high partial pressure of hydrogen, in agreement with the trend predicted by a thermodynamic simulation performed for the system Cr-C-H [45].…”
Section: Control Of the Carbon Incorporation In Mocvd Filmsmentioning
confidence: 99%
“…In the last few years Chemical Vapor Deposition (CVD) has been gaining in popularity, becoming a widely used process in modern technology (1). Its applications ranges from the manufacture of semiconductors devices (2) to the production, coating and infiltration of structural fibers and composite materials (3).…”
Section: Introductionmentioning
confidence: 99%