Chemical vapor deposition of cubic gallium sulfide thin films: a new metastable phase

MacInnes, Andrew N.; Power, Michael B.; Barron, Andrew R.

doi:10.1021/cm00019a005

Cited by 113 publications

(53 citation statements)

References 3 publications

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“…Using cubane-type tertbutylgallium sulfide [( t Bu)GaS] 4 in an atmospheric pressure MOCVD experiment, the authors obtained the deposition of a new metastable cubic GaS. [102] This result was very interesting as cubic GaS films proved to passivate GaAs. [103] The precursor had previously been shown to be air stable, to sublime at 225 C under atmospheric pressure, and to have a cubane-type structure (i.e., a pseudo-cubic Ga 4 S 4 cluster core) in the solid state.…”

Section: From Alkyl Metal Chalcogenatesmentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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The single-source approach to processing materials as thin films by metal±organic chemical vapor deposition (MOCVD) started with pioneering works in the late 1970s and early 1980s, and has developed considerably during the late 1980s and the 1990s. The literature contains some review and feature articles dedicated to its application to various types of materials, the most recent ones appearing in the mid 1990s. The present review aims at putting together results obtained for very different materials so as to obtain a comparative view of the different approaches. Faced with the considerable amount of data accumulated over more than twenty years, the scope of this article will be deliberately and arbitrarily limited to those compounds mentioned in the title. Materials consisting of elements from the second row of the periodic table, or binary combinations including one element from the second row, will not be considered here. This article will refer to precursors that have actually been used in MOCVD processes, rather than potential MOCVD sources.

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Section: From Alkyl Metal Chalcogenatesmentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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“…Although various available techniques such as chemical vapor deposition, [ 9,10 ] atomic layer deposition, [ 11,12 ] molecular beam epitaxy, [ 13,14 ] electrodeposition, [ 7,15 ] successive ionic layer adsorption and reaction, [ 16,17 ] vapor sublimation, [ 18 ] etc., are able to produce thin fi lms of MS, they lack generality or need sophisticated instrumentation, and are complicated. In this context, chemical bath deposition is inarguably the simplest method for thin fi lm deposition.…”

mentioning

confidence: 99%

Revisiting Metal Sulfide Semiconductors: A Solution‐Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects

Shinde

Patil

Cho

et al. 2015

Adv Funct Materials

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5739wileyonlinelibrary.com deposition method, which is facile, benign, and which can deposit a uniform MS thin fi lms is highly desirable. Although various available techniques such as chemical vapor deposition, [ 9,10 ] atomic layer deposition, [ 11,12 ] molecular beam epitaxy, [ 13,14 ] electrodeposition, [ 7,15 ] successive ionic layer adsorption and reaction, [ 16,17 ] vapor sublimation, [ 18 ] etc., are able to produce thin fi lms of MS, they lack generality or need sophisticated instrumentation, and are complicated. In this context, chemical bath deposition is inarguably the simplest method for thin fi lm deposition. Generally, a suitable complexing agent and pH regulating agents are added in order to avoid spontaneous precipitation in an aqueous bath, which makes the process complicated due to extremely critical optimization for concentration of complexing agents and pH adjustment for an individual MS case. [ 4,[19][20][21][22] As a result, development of MS fi lms by solution-based method has often been a case of trial-and-error with poor reproducibility, which remained as an unexplored research fi eld yet in material science and technology. In order to tackle the above problems in aqueous solution, the fi lm deposition reaction is carried out in ethanol solution without the use of any complexing and/or pH-regulating agents. This protocol relies on dissolution of metal salts and thioacetamide in ethanol and heating the solutions at 70 °C. Although very few reports on MS fi lm deposition from nonaqueous solution has been reported, [ 23,24 ] no general protocol is available that can be applied overall to deposit all variety of MS thin fi lms under similar conditions with good reproducibility. The proposed protocol is extremely simple and general, which can lay simple guidelines to fabricate almost all types of metal sulfi des uniformly over all area of the substrate, provided that the corresponding metal salts are soluble in ethanol. The as-deposited MS fi lms are highly crystalline even without thermal treatment. Interestingly, the fi lms can be directly grown on variety of conducting as well as non-conducting substrates such as glass, plastic, fl uorine doped tin oxide (FTO), Ti-foil, carbon paper, Whatman fi lter paper, etc., which can be of great technological importance. As an example of potential application of these thin fi lms, we demonstrate the use of NiS fi lm deposited on fl exible plastic substrates as FTO-free dual-functioned (electronic support + electrocatalytic) counter electrode in dye-sensitized solar cells Revisiting Metal Sulfi de

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“…The second is a metastable fcc phase prepared by MOCVD from the cubane precursor [(t-Bu)GaS] 4 . 36 The latter phase does not contain any Ga-Ga interactions and is therefore most probably a mixed valence Ga I /Ga III compound. However, while the electronic structure of the cubic phase is not fully understood, it does have significant applications as a passivation layer on GaAs and other group 13 -15 materials.…”

Section: Sulfides and Selenidesmentioning

confidence: 99%

“…The recently reported MOCVD-grown metastable cubic phase of gallium sulfide (GaS), 36 which forms a nearly lattice-matched layer on GaAs, shows promise as a stable commercially viable passivation layer for GaAs-based devices.…”

mentioning

confidence: 99%

Gallium: Inorganic ChemistryBased in part on the article Gallium: Inorganic Chemistry by Andrew R. Barron which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

Banger

Hepp

2005

Encyclopedia of Inorganic Chemistry

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An overview of the inorganic chemistry of gallium and its compounds is reported in detail with an attempt to bring up to date current studies in this field. In addition, the use of various Ga related alloys as either binary or ternary semiconducting material for bulk, thin film, and nanotechnology is reported in detail pertaining to their synthesis, properties, and application. The chemistry of Ga inorganic and coordination derivatives is also reviewed and discussed.

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Chemical vapor deposition of cubic gallium sulfide thin films: a new metastable phase

Cited by 113 publications

References 3 publications

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Revisiting Metal Sulfide Semiconductors: A Solution‐Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects

Gallium: Inorganic ChemistryBased in part on the article Gallium: Inorganic Chemistry by Andrew R. Barron which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

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