Chemical Vapor Deposition of Silicon Carbide/Titanium Carbide Composite Films from Dichlorodimethylsilane, Titanium Tetrachloride, and Methane

Takeuchi, Toshio; Miyoshi, Hisaaki; Egashira, Yasuyuki; Komiyama, Hiroshi

doi:10.1149/1.1391644

Cited by 6 publications

(5 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In these deposition pathways, the diffusion of chemical species in the r direction in the narrow tubular CVD reactor used in this study was not a ratecontrolled step. 13 To determine the predominant film deposition pathway and the reaction kinetics, a numerical modeling of the film formation process was performed under the following reasonable assumptions: (i) The diffusion of gaseous materials along the z direction is negligible, (ii) the flow inside the tubular reactor is a plug flow, and (iii) the gas temperature and the concentration are constant along the r direction. Consequently, the basic equations expressing the change in the precursor concentration can be derived by suggesting (i) the gas-phase reaction model and (ii) the surface reaction model.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Chemical Reaction Kinetics and Growth Rate of (Ba, Sr) TiO[sub 3] Films Prepared by Liquid Source Chemical Vapor Deposition

Fujimoto

Itoh

Okuyama

et al. 2000

J. Electrochem. Soc.

View full text Add to dashboard Cite

A new liquid source chemical vapor deposition process is introduced for preparing (Ba, Sr)TiO 3 (BST) thin films from Ba(DPM) 2 (tetraglyme), Sr(DPM) 2 (tetraglyme), and Ti(DPM) 2 (i-OC 3 H 7 ) 2 (DPM ϭ dipivaloylmethanato) dissolved in butylacetate. The film deposition mechanism as well as the BST film growth rate are determined by studying the film formation and the associated chemical reaction kinetics as a function of temperature and gas flow rates. It is demonstrated that in the formation of BST films, the three precursors, TiO 2 , BaTiO 3 , and SrTiO 3 , react and produce deposits or intermediates independently. The deposition rate of BST films is the summation of the respective growth rates of the BaO, SrO, and TiO 2 films. The gas-phase decomposition reactions of the precursors, rather than their surface reactions on the substrate, dominate the BST film growth rate. The kinetics of the three overall chemical reactions to produce the oxide films of Ba, Sr, and Ti are determined by comparing the experimental film deposition rates and the numerical results. The suggested chemical reaction kinetics and the reaction rate constants are expected to be important in the design of metallorganic chemical vapor deposition reactors for BST films.

show abstract

Section: Resultsmentioning

confidence: 99%

“…However, this increase was neglected since the change of volume was smaller than 3%. Using a linear interpolation, the pressure at the axial position z can be given by [13] Here, p in and p out are the pressures at the inlet and the outlet of the tubular reactor, respectively.…”

Section: Resultsmentioning

confidence: 99%

Chemical Reaction Kinetics and Growth Rate of (Ba, Sr) TiO[sub 3] Films Prepared by Liquid Source Chemical Vapor Deposition

Fujimoto

Itoh

Okuyama

et al. 2000

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…In many CVD studies, methane (CH 4 ) is used as the carbon source to deposit transition metal carbide or ternary films such as HfC [11,21], TiC [22,23], and TiBC [3]. However, methane does not crack easily, which necessitates growth temperatures > 800ºC [3,23] or the use of plasma decomposition [5].…”

Section: Introductionmentioning

confidence: 99%

Conformal growth of low friction HfBxCy hard coatings

et al. 2015

View full text Add to dashboard Cite

Thin films of HfB x C y are deposited in a cold wall CVD apparatus using Hf(BH 4) 4 precursor and 3,3-Dimethyl-1-butene, (CH 3) 3 CCH=CH 2 , as a controllable source of carbon, at substrate temperatures of 250-600°C. As-deposited films grown at 250°C are highly conformal (e.g., in a very deep trench, the step coverage is above 90% at a depth/width of 30:1), exhibit dense microstructure, and appear amorphous in X-ray diffraction. Increasing the carbon content from 5 to 21 at. % decreases the hardness from 21 to 9 GPa and the elastic modulus from 207 to 114 GPa. Films grown at 600°C with carbon contents of 28 and 35 at. % exhibit enhanced hardness of 25 and 23 GPa, and elastic modulus of 211 and 202 GPa, respectively. Annealing the 300°C grown films at 700°C afford a nanocrystalline structure with improved mechanical properties.

show abstract

“…The addition of silicon to TiN films deposited by physical and chemical vapor deposition methods has yielded coatings with high hardness levels. [3][4][5][6] The addition of silicon to TiC films has been examined in several studies, [7][8][9][10][11][12] but the hardness of these films has not greatly exceeded that of bulk TiC. Results for physical vapor deposition (PVD) films of Ti-Si-C-N recently have been reported, and they have shown hardness levels in the 15-35 GPa range, along with a highly disordered structure.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Properties of Sputter‐Deposited Titanium‐Silicon‐Carbon Films

Krzanowski

Koutzaki

2001

Journal of the American Ceramic Society

View full text Add to dashboard Cite

The effect of SiC additions on the mechanical properties of TiC films was investigated. Ti-Si-C films with varying SiC content were deposited using dual-cathode radio-frequency magnetron sputtering. The nanoindentation hardness of these films increased with SiC content to a maximum of 20 -22 GPa for films in the range of 15-30 at.% SiC. The elastic modulus was also measured, and the hardness to modulus ratio (H/E) increased with SiC content, indicating that hardness increases were due to microstructural effects. The residual stress was measured in several films, but was low in magnitude, indicating that hardness measurements were not influenced by residual stress. TEM examination of several films revealed that the SiC additions altered the film microstructure in a manner that could account for the observed hardness increases.

show abstract

Chemical Vapor Deposition of Silicon Carbide/Titanium Carbide Composite Films from Dichlorodimethylsilane, Titanium Tetrachloride, and Methane

Cited by 6 publications

References 30 publications

Chemical Reaction Kinetics and Growth Rate of (Ba, Sr) TiO[sub 3] Films Prepared by Liquid Source Chemical Vapor Deposition

Chemical Reaction Kinetics and Growth Rate of (Ba, Sr) TiO[sub 3] Films Prepared by Liquid Source Chemical Vapor Deposition

Conformal growth of low friction HfBxCy hard coatings

Mechanical Properties of Sputter‐Deposited Titanium‐Silicon‐Carbon Films

Contact Info

Product

Resources

About